Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks
文献类型：期刊论文
| 作者 | Xiang,Yuren; Zhou,Chunlan; Jia,Endong; Wang,Wenjing |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2015-03-19 |
| 卷号 | 10期号:1 |
| 关键词 | Atomic layer deposition Al2o3 A-si:h(i)/al2o3 stack Interface trap density |
| ISSN号 | 1931-7573 |
| DOI | 10.1186/s11671-015-0798-2 |
| 通讯作者 | Zhou,chunlan(zhouchl@mail.iee.ac.cn) |
| 英文摘要 | Abstractin order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. in this work, we prepared a-si:h(i)/al2o3 stacks on koh solution-polished n-type solar grade mono-silicon(100) wafers. for the al2o3 film deposition, both thermal atomic layer deposition (t-ald) and plasma enhanced atomic layer deposition (pe-ald) were used. interface trap density spectra were obtained for si passivation with a-si films and a-si:h(i)/al2o3 stacks by a non-contact corona c-v technique. after the fabrication of a-si:h(i)/al2o3 stacks, the minimum interface trap density was reduced from original 3?×?1012 to 1?×?1012?cm?2?ev?1, the surface total charge density increased by nearly one order of magnitude for pe-ald samples and about 0.4?×?1012?cm?2 for a t-ald sample, and the carrier lifetimes increased by a factor of three (from about 10?μs to about 30?μs). combining these results with an x-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ald al2o3 deposition on al2o3 single layers and a-si:h(i)/al2o3 stack surface passivation from field-effect passivation and chemical passivation perspectives. in addition, the influence of the stack fabrication process on the a-si film structure was also discussed in this study. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/S11671-015-0798-2 |
| 出版者 | Springer US |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374283 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhou,Chunlan |
| 作者单位 | Chinese Academy of Sciences; Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering |
| 推荐引用方式 GB/T 7714 | Xiang,Yuren,Zhou,Chunlan,Jia,Endong,et al. Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks[J]. Nanoscale research letters,2015,10(1). |
| APA | Xiang,Yuren,Zhou,Chunlan,Jia,Endong,&Wang,Wenjing.(2015).Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks.Nanoscale research letters,10(1). |
| MLA | Xiang,Yuren,et al."Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks".Nanoscale research letters 10.1(2015). |
入库方式： iSwitch采集
来源：中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。