Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure
文献类型：期刊论文
| 作者 | Wang,Peng1,3; Chen,Qimiao1,3; Wu,Xiaoyan1,3; Cao,Chunfang1; Wang,Shumin1,2; Gong,Qian1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2016-03-01 |
| 卷号 | 11期号:1 |
| 关键词 | Quantum dots Inas/ingaas Dot-in-well Ingaas matrix Photoluminescence Finite element Afm Tem |
| ISSN号 | 1931-7573 |
| DOI | 10.1186/s11671-016-1339-3 |
| 通讯作者 | Gong,qian(qgong@mail.sim.ac.cn) |
| 英文摘要 | Abstractinas/ingaas dot-in-well (dwell) structures have been investigated with the systematically varied ingaas thickness. both the strained buffer layer (sbl) below the dot layer and the strain-reducing layer (srl) above the dot layer were found to be responsible for the redshift in photoluminescence (pl) emission of the inas/ingaas dwell structure. a linear followed by a saturation behavior of the emission redshift was observed as a function of the sbl and srl thickness, respectively. the pl intensity is greatly enhanced by applying both of the srl and sbl. finite element analysis simulation and transmission electron microscopy (tem) measurement were carried out to analyze the strain distribution in the inas qd and the ingaas sbl. the results clearly indicate the strain reduction in the qd induced by the sbl, which are likely the main cause for the emission redshift. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/S11671-016-1339-3 |
| 出版者 | Springer US |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374284 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Gong,Qian |
| 作者单位 | 1.Chinese Academy of Sciences; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology 2.Chalmers University of Technology; Department of Microtechnology and Nanoscience 3.University of Chinese Academy of Sciences; School of Physics |
| 推荐引用方式 GB/T 7714 | Wang,Peng,Chen,Qimiao,Wu,Xiaoyan,et al. Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure[J]. Nanoscale research letters,2016,11(1). |
| APA | Wang,Peng,Chen,Qimiao,Wu,Xiaoyan,Cao,Chunfang,Wang,Shumin,&Gong,Qian.(2016).Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure.Nanoscale research letters,11(1). |
| MLA | Wang,Peng,et al."Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure".Nanoscale research letters 11.1(2016). |
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来源：中国科学院大学
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