Influence of gaasbi matrix on optical and structural properties of inas quantum dots
文献类型:期刊论文
作者 | Wang,Peng1,2; Pan,Wenwu1,2; Wu,Xiaoyan1,2; Liu,Juanjuan1,2; Cao,Chunfang1; Wang,Shumin1,3; Gong,Qian1 |
刊名 | Nanoscale research letters
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出版日期 | 2016-06-02 |
卷号 | 11期号:1 |
关键词 | Inas Quantum dot Gaasbi Mbe Thermal stability |
ISSN号 | 1931-7573 |
DOI | 10.1186/s11671-016-1470-1 |
通讯作者 | Gong,qian(qgong@mail.sim.ac.cn) |
英文摘要 | Abstractinas/gaasbi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. gaasbi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (pl) emission wavelength of inas quantum dot (qd). in addition, a remarkable pl intensity enhancement is also obtained compared with low-temperature-grown gaas-capped inas qd sample. the gaasbi matrix also preserves the shape of inas qds and leads to increase the activation energy for nonradiative recombination process at low temperature. lower density and larger size of inas qds are obtained on the gaasbi surface compared with the qds grown on gaas surface. |
语种 | 英语 |
WOS记录号 | BMC:10.1186/S11671-016-1470-1 |
出版者 | Springer US |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374285 |
专题 | 中国科学院大学 |
通讯作者 | Gong,Qian |
作者单位 | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 2.University of Chinese Academy of Sciences; School of Physics 3.Chalmers University of Technology; Department of Microtechnology and Nanoscience |
推荐引用方式 GB/T 7714 | Wang,Peng,Pan,Wenwu,Wu,Xiaoyan,et al. Influence of gaasbi matrix on optical and structural properties of inas quantum dots[J]. Nanoscale research letters,2016,11(1). |
APA | Wang,Peng.,Pan,Wenwu.,Wu,Xiaoyan.,Liu,Juanjuan.,Cao,Chunfang.,...&Gong,Qian.(2016).Influence of gaasbi matrix on optical and structural properties of inas quantum dots.Nanoscale research letters,11(1). |
MLA | Wang,Peng,et al."Influence of gaasbi matrix on optical and structural properties of inas quantum dots".Nanoscale research letters 11.1(2016). |
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来源:中国科学院大学
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