Dry etched sio2 mask for hgcdte etching process
文献类型：期刊论文
| 作者 | Chen, Y. Y.1,2; Ye, Z. H.1; Sun, C. H.1; Deng, L. G.3; Zhang, S.1; Xing, W.1; Hu, X. N.1; Ding, R. J.1; He, L.1 |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 45期号:9页码:4705-4710 |
| 关键词 | Sio2 mask Auto-stopping point Hgcdte Icp etching |
| ISSN号 | 0361-5235 |
| DOI | 10.1007/s11664-016-4479-4 |
| 通讯作者 | Ye, z. h.(zhye@mail.sitp.ac.cn) |
| 英文摘要 | A highly anisotropic etching process with low etch-induced damage is indispensable for advanced hgcdte (mct) infrared focal plane array (irfpa) detectors. the inductively coupled plasma (icp) enhanced reactive ion etching technique has been widely adopted in manufacturing hgcdte irfpa devices. an accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. it has been reported by our group that the sio2 mask functions well in etching hgcdte with high selectivity. however, the wet process in defining the sio2 mask is limited by ambiguous edges and nonuniform patterns. in this report, we patterned sio2 with a mature icp etching technique, prior to which a thin zns film was deposited by thermal evaporation. the sio2 film etching can be terminated at the auto-stopping point of the zns layer thanks to the high selectivity of sio2/zns in sf6 based etchant. consequently, mct etching was directly performed without any other treatment. this mask showed acceptable profile due to the maturity of the sio2 etching process. the well-defined sio2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. this new mask process could transfer the patterns exactly with very small etch-bias. a cavity with aspect-ratio (ar) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher ar of 1.67 was also get with better mask profile. this masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution. |
| WOS关键词 | ELECTRON-CYCLOTRON-RESONANCE ; II-VI SEMICONDUCTORS ; ASPECT RATIO ; PLASMA ; TRENCHES ; LITHOGRAPHY ; SELECTIVITY ; CONVERSION ; DETECTORS ; DIODES |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000381080000031 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374385 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Ye, Z. H. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 3.Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England |
| 推荐引用方式 GB/T 7714 | Chen, Y. Y.,Ye, Z. H.,Sun, C. H.,et al. Dry etched sio2 mask for hgcdte etching process[J]. Journal of electronic materials,2016,45(9):4705-4710. |
| APA | Chen, Y. Y..,Ye, Z. H..,Sun, C. H..,Deng, L. G..,Zhang, S..,...&He, L..(2016).Dry etched sio2 mask for hgcdte etching process.Journal of electronic materials,45(9),4705-4710. |
| MLA | Chen, Y. Y.,et al."Dry etched sio2 mask for hgcdte etching process".Journal of electronic materials 45.9(2016):4705-4710. |
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来源：中国科学院大学
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