Dark current characterization of sw hgcdte irfpas detectors on si substrate with long time integration
文献类型：期刊论文
| 作者 | Song, P. Y.1,2,3; Ye, Z. H.1; Huang, A. B.1; Chen, H. L.1; Hu, X. N.1; Ding, R. J.1; He, L.1 |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 45期号:9页码:4711-4715 |
| 关键词 | Sw irfpa Dark current characterization Di readout Ctia readout Long time integration |
| ISSN号 | 0361-5235 |
| DOI | 10.1007/s11664-016-4556-8 |
| 通讯作者 | Ye, z. h.(zhye@mail.sitp.ac.cn) |
| 英文摘要 | The dark currents of two short wave (sw) hgcdte infrared focal plane arrays (irfpa) detectors hybridized with direct injection (di) readout and capacitance transimpedance amplifier (ctia) with long time integration were investigated. the cutoff wavelength of the two sw irfpas is about 2.6 mu m at 84 k. the dark current densities of di and ctia samples are approximately 8.0 x 10(-12) a/cm(2) and 7.2 x 10(-10) a/cm(2) at 110 k, respectively. the large divergence of the dark current density might arise from the injection efficiency difference of the two readouts. the low injection efficiency of the di readout, compared with the high injection efficiency of the ctia readout at low temperature, makes the dark current density of the di sample much lower than that of the ctia sample. the experimental value of injection efficiency of the di sample was evaluated as 1.1% which is consistent with its theoretical value. |
| WOS关键词 | PERFORMANCE ; ARRAYS ; MODEL |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000381080000032 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374400 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Ye, Z. H. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 3.Henan Univ Sci & Technol, Luoyang 471023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Song, P. Y.,Ye, Z. H.,Huang, A. B.,et al. Dark current characterization of sw hgcdte irfpas detectors on si substrate with long time integration[J]. Journal of electronic materials,2016,45(9):4711-4715. |
| APA | Song, P. Y..,Ye, Z. H..,Huang, A. B..,Chen, H. L..,Hu, X. N..,...&He, L..(2016).Dark current characterization of sw hgcdte irfpas detectors on si substrate with long time integration.Journal of electronic materials,45(9),4711-4715. |
| MLA | Song, P. Y.,et al."Dark current characterization of sw hgcdte irfpas detectors on si substrate with long time integration".Journal of electronic materials 45.9(2016):4711-4715. |
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来源：中国科学院大学
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