Electrical characteristics of mid-wavelength hgcdte photovoltaic detectors exposed to gamma irradiation
文献类型：期刊论文
| 作者 | Qiao, H.1,3; Hu, W. D.2; Li, T.1; Li, X. Y.1; Chang, Y.4 |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 45期号:9页码:4640-4645 |
| 关键词 | Irradiation effects Hydrogenation Dark current Series resistance Photovoltaic Hgcdte |
| ISSN号 | 0361-5235 |
| DOI | 10.1007/s11664-016-4466-9 |
| 通讯作者 | Qiao, h.(qiaohui@mail.sitp.ac.cn) |
| 英文摘要 | The study of electrical characteristics of mid-wavelength hgcdte photodiodes irradiated by steady-state gamma rays has been carried out. the measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance r-0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. the irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. the influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of hgcdte photodiodes, and it was found that r-0 for the hydrogenated devices showed similar change to those without hydrogenation. the series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 mrad(si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation. |
| WOS关键词 | RADIATION ; HYDROGENATION |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000381080000021 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374414 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Qiao, H. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 4.Univ Illinois, 845 West Taylor St, Chicago, IL 60607 USA |
| 推荐引用方式 GB/T 7714 | Qiao, H.,Hu, W. D.,Li, T.,et al. Electrical characteristics of mid-wavelength hgcdte photovoltaic detectors exposed to gamma irradiation[J]. Journal of electronic materials,2016,45(9):4640-4645. |
| APA | Qiao, H.,Hu, W. D.,Li, T.,Li, X. Y.,&Chang, Y..(2016).Electrical characteristics of mid-wavelength hgcdte photovoltaic detectors exposed to gamma irradiation.Journal of electronic materials,45(9),4640-4645. |
| MLA | Qiao, H.,et al."Electrical characteristics of mid-wavelength hgcdte photovoltaic detectors exposed to gamma irradiation".Journal of electronic materials 45.9(2016):4640-4645. |
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来源：中国科学院大学
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