Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors
文献类型：期刊论文
| 作者 | Zhang, Peng1,3; Ye, Zhen-Hua1; Sun, Chang-Hong1; Chen, Yi-Yu1,3; Zhang, Tian-Ning2,3; Chen, Xin2; Lin, Chun1; Ding, Ring-Jun1; He, Li1 |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 45期号:9页码:4716-4720 |
| 关键词 | Ald al2o3 Minority carrier lifetime C-v characteristics R-v characteristics Baking stability |
| ISSN号 | 0361-5235 |
| DOI | 10.1007/s11664-016-4686-z |
| 通讯作者 | Ye, zhen-hua(zhye@mail.sitp.ac.cn) |
| 英文摘要 | The passivation effect of atomic layer deposition of (ald) al2o3 film on a hgcdte infrared detector was investigated in this work. the passivation effect of al2o3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage (c-v) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage (r-v) characteristics of variable-area photodiodes. the minority carrier lifetime, c-v characteristics, and r-v characteristics of hgcdte devices passivated by ald al2o3 film was comparable to those of hgcdte devices passivated by e-beam evaporation of zns/cdte film. however, the baking stability of devices passivated by al2o3 film is inferior to that of devices passivated by zns/cdte film. in future work, by optimizing the ald al2o3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SURFACE PASSIVATION ; CDTE ; CDTE/HGCDTE |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000381080000033 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374426 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Ye, Zhen-Hua |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Peng,Ye, Zhen-Hua,Sun, Chang-Hong,et al. Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors[J]. Journal of electronic materials,2016,45(9):4716-4720. |
| APA | Zhang, Peng.,Ye, Zhen-Hua.,Sun, Chang-Hong.,Chen, Yi-Yu.,Zhang, Tian-Ning.,...&He, Li.(2016).Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors.Journal of electronic materials,45(9),4716-4720. |
| MLA | Zhang, Peng,et al."Passivation effect of atomic layer deposition of al2o3 film on hgcdte infrared detectors".Journal of electronic materials 45.9(2016):4716-4720. |
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来源：中国科学院大学
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