Rapid fabrication of a silicon modification layer on silicon carbide substrate
文献类型：期刊论文
| 作者 | Bai, Yang1; Li, Longxiang1,2; Xue, Donglin1; Zhang, Xuejun1 |
| 刊名 | Applied optics
 |
| 出版日期 | 2016-08-01 |
| 卷号 | 55期号:22页码:5814-5820 |
| ISSN号 | 1559-128X |
| DOI | 10.1364/ao.55.005814 |
| 通讯作者 | Bai, yang(baiyang5406@sina.com) |
| 英文摘要 | We develop a kind of magnetorheological (mr) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. the effect of abrasive concentration in mr polishing fluid on material removal rate and removal function shape is investigated. we conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. the removal function stability is also studied and the results show that the prepared mr polishing fluid can satisfy actual fabrication requirements. an aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (mrf) using two types of mr polishing fluid and computer controlled optical surfacing (ccos) processes. the surface accuracy root mean square (rms) is improved from 0.087 lambda (lambda = 632.8 nm) initially to 0.020 lambda (lambda = 632.8 nm) in 5.5 h total and the tool marks resulting from mrf are negligible. the psd analysis results also shows that the final surface is uniformly polished. (c) 2016 optical society of america |
| WOS关键词 | MATERIAL REMOVAL ; SURFACES ; MIRRORS ; OPTICS |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000380742300002 |
| 出版者 | OPTICAL SOC AMER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374437 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Bai, Yang |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bai, Yang,Li, Longxiang,Xue, Donglin,et al. Rapid fabrication of a silicon modification layer on silicon carbide substrate[J]. Applied optics,2016,55(22):5814-5820. |
| APA | Bai, Yang,Li, Longxiang,Xue, Donglin,&Zhang, Xuejun.(2016).Rapid fabrication of a silicon modification layer on silicon carbide substrate.Applied optics,55(22),5814-5820. |
| MLA | Bai, Yang,et al."Rapid fabrication of a silicon modification layer on silicon carbide substrate".Applied optics 55.22(2016):5814-5820. |
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来源：中国科学院大学
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