Temperature-dependent resistance switching in srtio3
文献类型：期刊论文
| 作者 | Li, Jian-kun1,2; Ma, Chao1; Jin, Kui-juan1,2,3; Ge, Chen1; Gu, Lin1; He, Xu1; Zhou, Wen-jia1; Zhang, Qing-hua4; Lu, Hui-bin1; Yang, Guo-zhen1,3 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2016-06-13 |
| 卷号 | 108期号:24页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4953624 |
| 通讯作者 | Jin, kui-juan(kjjin@iphy.ac.cn) ; Ge, chen(gechen@iphy.ac.cn) |
| 英文摘要 | Resistance switching phenomena were studied by varying temperature in srtio3 single crystal. the resistance hysteresis loops appear at a certain temperature ranging from 340k to 520 k. with the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. these resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. at temperatures above 340k, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. therefore, two resistance states are produced under the cooperative effect of built-in field and external field. however, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 k. published by aip publishing. |
| WOS关键词 | OXYGEN VACANCIES ; DOPED SRTIO3 ; JUNCTIONS ; MEMORIES ; DEVICES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000379037200050 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374672 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Jin, Kui-juan; Ge, Chen |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China 4.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Jian-kun,Ma, Chao,Jin, Kui-juan,et al. Temperature-dependent resistance switching in srtio3[J]. Applied physics letters,2016,108(24):5. |
| APA | Li, Jian-kun.,Ma, Chao.,Jin, Kui-juan.,Ge, Chen.,Gu, Lin.,...&Yang, Guo-zhen.(2016).Temperature-dependent resistance switching in srtio3.Applied physics letters,108(24),5. |
| MLA | Li, Jian-kun,et al."Temperature-dependent resistance switching in srtio3".Applied physics letters 108.24(2016):5. |
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来源：中国科学院大学
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