Highly sensitive visible to infrared mote2 photodetectors enhanced by the photogating effect
文献类型：期刊论文
| 作者 | Huang, Hai1,2; Wang, Jianlu1,2; Hu, Weida1,2; Liao, Lei3,4; Wang, Peng1; Wang, Xudong1; Gong, Fan1,3,4; Chen, Yan1,2; Wu, Guangjian1,2; Luo, Wenjin1,2 |
| 刊名 | Nanotechnology
 |
| 出版日期 | 2016-11-04 |
| 卷号 | 27期号:44页码:7 |
| 关键词 | Mote2 Photodetectors Visible to infrared Photogating effect |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/0957-4484/27/44/445201 |
| 通讯作者 | Hu, weida(wdhu@mail.sitp.ac.cn) |
| 英文摘要 | Two-dimensional materials are promising candidates for electronic and optoelectronic applications. mote2 has an appropriate bandgap for both visible and infrared light photodetection. here we fabricate a high-performance photodetector based on few-layer mote2. raman spectral properties have been studied for different thicknesses of mote2. the photodetector based on few-layer mote2 exhibits broad spectral range photodetection (0.6-1.55 mu m) and a stable and fast photoresponse. the detectivity is calculated to be 3.1 x 10(9) cm hz(1/2) w-1 for 637 nm light and 1.3 x 10(9) cm hz(1/2)w(-1) for 1060 nm light at a backgate voltage of 10 v. the mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. the appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors. |
| WOS关键词 | FIELD-EFFECT TRANSISTORS ; TEMPERATURE-DEPENDENT RAMAN ; ATOMICALLY THIN MOS2 ; FEW-LAYER MOTE2 ; BROAD-BAND ; THERMAL-CONDUCTIVITY ; MONOLAYER MOS2 ; GRAPHENE ; SEMICONDUCTORS ; SPECTROSCOPY |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000385487400001 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374766 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Hu, Weida |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 3.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 4.Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Hai,Wang, Jianlu,Hu, Weida,et al. Highly sensitive visible to infrared mote2 photodetectors enhanced by the photogating effect[J]. Nanotechnology,2016,27(44):7. |
| APA | Huang, Hai.,Wang, Jianlu.,Hu, Weida.,Liao, Lei.,Wang, Peng.,...&Chu, Junhao.(2016).Highly sensitive visible to infrared mote2 photodetectors enhanced by the photogating effect.Nanotechnology,27(44),7. |
| MLA | Huang, Hai,et al."Highly sensitive visible to infrared mote2 photodetectors enhanced by the photogating effect".Nanotechnology 27.44(2016):7. |
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来源：中国科学院大学
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