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Annealing of cdznte materials to reduce inclusion defects

文献类型：期刊论文

作者Xu, Chao1,2; Sheng, Fengfeng1,2; Yang, Jianrong1,2
刊名Journal of crystal growth
出版日期2016-10-01
卷号451页码:126-131
ISSN号0022-0248
关键词Cadmium zinc telluride Inclusion defects Annealing Infrared focal plane
DOI10.1016/j.jcrysgro.2016.07.024
通讯作者Xu, chao()
英文摘要Annealing of (cdzn)te substrate material is an important technology to enhance the quality of hgcdte epitaxial material as well as the performance of infrared focal plane array detectors. in this paper, the size variations of inclusions defects in (cdzn)te material after annealing were investigated. and the quantitative dependencies of the inclusion defect sizes on the sample temperature, cd partial pressure and annealing time were obtained. some properties of inclusion defects and rules of inclusion defect evolution in annealing were revealed. the models of the inclusion defects and the physical mechanism of annealing process based on atom diffusions were proposed to describe the experimental results. the research results can help us to better understand the evolution process of the inclusion defects in annealing and find suitable annealing technology to obtain high-quality (cdzn)te materials. (c) 2016 elsevier b.v. all rights reserved.
WOS关键词SINGLE-CRYSTALS ; TE INCLUSIONS ; MORPHOLOGY EVOLUTION ; CDTE ; SURFACE ; RICH
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000385321000019
URI标识http://www.irgrid.ac.cn/handle/1471x/2374836
专题中国科学院大学
通讯作者Xu, Chao
作者单位1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Image Mat & Devices, Shanghai 200080, Peoples R China
2.Univ Chinese Acad Sci, Beijing, Peoples R China
推荐引用方式
GB/T 7714		 Xu, Chao,Sheng, Fengfeng,Yang, Jianrong. Annealing of cdznte materials to reduce inclusion defects[J]. Journal of crystal growth,2016,451:126-131.
APA Xu, Chao,Sheng, Fengfeng,&Yang, Jianrong.(2016).Annealing of cdznte materials to reduce inclusion defects.Journal of crystal growth,451,126-131.
MLA Xu, Chao,et al."Annealing of cdznte materials to reduce inclusion defects".Journal of crystal growth 451(2016):126-131.

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来源：中国科学院大学

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