Synthesis, properties and applications of 2d layered (mxvi)-x-iii (m = ga, in; x = s, se, te) materials
文献类型:期刊论文
作者 | Xu, Kai1,2; Yin, Lei1,2; Huang, Yun1,2; Shifa, Tofik Ahmed1,2; Chu, Junwei1; Wang, Feng1,2; Cheng, Ruiqing1,2; Wang, Zhenxing1; He, Jun1 |
刊名 | Nanoscale
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出版日期 | 2016 |
卷号 | 8期号:38页码:16802-16818 |
ISSN号 | 2040-3364 |
DOI | 10.1039/c6nr05976g |
通讯作者 | He, jun(hej@nanoctr.cn) |
英文摘要 | Group iii-vi compounds (mxvi)-x-iii (m = ga, in; x = s, se, te) are one class of important 2d layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. similar to 2d layered transition metal dichalcogenides (tmds), (mxvi)-x-iii also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. more impressively, in contrast with tmdcs, (mxvi)-x-iii demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. these unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. in this review, we aim to provide a summary of the state-of-the-art of research activities in 2d layered (mxvi)-x-iii materials. the scope of the review covers the synthesis and properties of 2d layered (mxvi)-x-iii materials and their van der waals heterostructures. we especially focus on the applications in electronics and optoelectronics. moreover, the review concludes with some perspectives on future developments in this field. |
WOS关键词 | FIELD-EFFECT-TRANSISTORS ; ULTRATHIN 2-DIMENSIONAL NANOMATERIALS ; TRANSITION-METAL DICHALCOGENIDES ; DER-WAALS HETEROSTRUCTURES ; CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; LARGE-AREA SYNTHESIS ; P-N-JUNCTIONS ; HIGH-PERFORMANCE ; SINGLE-LAYER |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000385383100001 |
出版者 | ROYAL SOC CHEMISTRY |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374847 |
专题 | 中国科学院大学 |
通讯作者 | He, Jun |
作者单位 | 1.Chinese Acad Sci, Natl Ctr Nanosci & Technol, Ctr Excellence Nanosci, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, Kai,Yin, Lei,Huang, Yun,et al. Synthesis, properties and applications of 2d layered (mxvi)-x-iii (m = ga, in; x = s, se, te) materials[J]. Nanoscale,2016,8(38):16802-16818. |
APA | Xu, Kai.,Yin, Lei.,Huang, Yun.,Shifa, Tofik Ahmed.,Chu, Junwei.,...&He, Jun.(2016).Synthesis, properties and applications of 2d layered (mxvi)-x-iii (m = ga, in; x = s, se, te) materials.Nanoscale,8(38),16802-16818. |
MLA | Xu, Kai,et al."Synthesis, properties and applications of 2d layered (mxvi)-x-iii (m = ga, in; x = s, se, te) materials".Nanoscale 8.38(2016):16802-16818. |
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来源:中国科学院大学
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