Integrated high-performance infrared phototransistor arrays composed of nonlayered pbs-mos2 heterostructures with edge contacts
文献类型：期刊论文
| 作者 | Wen, Yao1,2,4; Yin, Lei1,3,4; He, Peng5; Wank, Zhenxing1,3; Zhang, XianKun6; Wang, Qisheng7; Shifa, Tofik Ahmed1,3,4; Xu, Kai1,3,4; Wang, Fengmei1,3,4; Zhan, Xueying1,3 |
| 刊名 | Nano letters
 |
| 出版日期 | 2016-10-01 |
| 卷号 | 16期号:10页码:6437-6444 |
| 关键词 | Nonlayered pbs-mos2 heterostructure Edge contact Integration Infrared phototramistor |
| ISSN号 | 1530-6984 |
| DOI | 10.1021/acs.nanolett.6b02881 |
| 通讯作者 | He, jun(hej@nanoctr.cn) |
| 英文摘要 | Molybdenum disulfide (mos2) has attracted a great deal of attention in optoelectronic applications due to its high mobility, low off-state current and high on/off ratio. however, its intrinsic large bandgap limits its application in infrared detection. here, we have developed a high-performance infrared photodetector by integrating nonlayered pbs and layered mos2 nanostructures via van der waals epitaxy. density functional theory (dft) calculations indicate that pbs nanoplates are in contact with mos2 edges through strong chemical hybridization, which is expected to offer a fast transmission path for carriers that enhances the response speed. the phototransistor exhibits a fast response (tau(rising) = tau(decay) = 7.8 ms) as well as high photoresponsivity (4.5 x 10(4) a.w-1) and i-light/i-dark (1.3 x 102) in the near-infrared spectral region at room temperature. in particular, the detectivity (d*) is as high as 3 x 10(13) jones, which is even better than that of commercial si and ingaas photodetectors. furthermore, by controlling the growth and microfabrication patterning, periodic device arrays of pbs-mos2 that are capable of infrared detection are achieved on si/sio2 substrates. our work provides a possible method for the integration of photodetector arrays on si-based electronic devices and lays a solid foundation for the practical applications of mos2-based devices in the future. |
| WOS关键词 | TRANSITION-METAL DICHALCOGENIDES ; QUANTUM-DOT PHOTODETECTORS ; CHEMICAL-VAPOR-DEPOSITION ; MONOLAYER MOS2 ; SINGLE-LAYER ; GROWTH ; SEMICONDUCTORS ; NANOMATERIALS ; PHOTOCURRENT ; TRANSISTORS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000385469800065 |
| 出版者 | AMER CHEMICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374869 |
| 专题 | 中国科学院大学 |
| 通讯作者 | He, Jun |
| 作者单位 | 1.Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China 2.Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China 3.Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China 6.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China 7.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore |
| 推荐引用方式 GB/T 7714 | Wen, Yao,Yin, Lei,He, Peng,et al. Integrated high-performance infrared phototransistor arrays composed of nonlayered pbs-mos2 heterostructures with edge contacts[J]. Nano letters,2016,16(10):6437-6444. |
| APA | Wen, Yao.,Yin, Lei.,He, Peng.,Wank, Zhenxing.,Zhang, XianKun.,...&He, Jun.(2016).Integrated high-performance infrared phototransistor arrays composed of nonlayered pbs-mos2 heterostructures with edge contacts.Nano letters,16(10),6437-6444. |
| MLA | Wen, Yao,et al."Integrated high-performance infrared phototransistor arrays composed of nonlayered pbs-mos2 heterostructures with edge contacts".Nano letters 16.10(2016):6437-6444. |
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来源：中国科学院大学
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