Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling
文献类型：期刊论文
| 作者 | Li, Heng1,2; Cheng, Gong1,2; Xu, Gaowei1; Luo, Le1 |
| 刊名 | Journal of materials science-materials in electronics
 |
| 出版日期 | 2016-11-01 |
| 卷号 | 27期号:11页码:11548-11555 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-016-5285-8 |
| 通讯作者 | Luo, le(leluo@mail.sim.ac.cn) |
| 英文摘要 | Thick cu films are widely used in wafer level packaging, and the stress evolution during subsequent thermal cycling as well as the induced wafer warpage may make a significant impact on product yielding and needs to be investigated. the stress evolution behavior of 5 mu m thick as-electroplated cu films during thermal cycling are in situ investigated by wafer warpage measurement. it is revealed by microstructure analyses that the grain growth during thermal cycling is ignorable in current work, but dramatic atomic diffusion has occurred, suggesting the deformation mechanism is dominated by diffusional creep. as the dominant diffusion mechanism differs at different temperatures, an equivalent diffusional energy that has a linearly correlation to temperature is proposed, and consequently a stress evolution model based on the equivalent diffusional energy is deduced. compared with conventional work, the current model has fewer fitted parameters, and shows better agreement with the experiment results. |
| WOS关键词 | ELECTROPLATED CU FILMS ; COPPER THIN-FILMS ; STRESS-RELAXATION ; DIFFUSIONAL CREEP ; RESIDUAL-STRESS ; SILICON ; ELECTROMIGRATION ; INTERCONNECTS ; INTEGRATION |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000386367000055 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374935 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Luo, Le |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Heng,Cheng, Gong,Xu, Gaowei,et al. Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling[J]. Journal of materials science-materials in electronics,2016,27(11):11548-11555. |
| APA | Li, Heng,Cheng, Gong,Xu, Gaowei,&Luo, Le.(2016).Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling.Journal of materials science-materials in electronics,27(11),11548-11555. |
| MLA | Li, Heng,et al."Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling".Journal of materials science-materials in electronics 27.11(2016):11548-11555. |
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来源：中国科学院大学
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