Pre-annealing induced oxide barrier to suppress the over-selenization of mo contact
文献类型：期刊论文
| 作者 | Li, Wen1,3; Han, Xiuxun1,2; Zhao, Yun1; Yang, Shengrong2 |
| 刊名 | Journal of materials science-materials in electronics
 |
| 出版日期 | 2016-11-01 |
| 卷号 | 27期号:11页码:11188-11191 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-016-5238-2 |
| 通讯作者 | Han, xiuxun(xxhan@licp.cas.cn) ; Yang, shengrong(sryang@lzb.ac.cn) |
| 英文摘要 | Molybdenum (mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. however, the easy formation of an over-thick mose2 layer between the cu2znsn(s,se)(4) absorber and mo back contact significantly deteriorates the device performance. to overcome the degradation, the effects of thermal treatment on mo layers have been investigated in this paper. it was found that pre-annealing mo back contacts is effective to control the growth of interfacial mose2 layer during selenization. moreover, the thickness of mose2 layer could be conveniently tailored by simply varying the pre-annealing temperature. the work provides direct proof that the appearance of a thin moo2 layer on the top of annealed mo film indeed acts as a temporary barrier to block the over-selenization of mo back contact. |
| WOS关键词 | FILM SOLAR-CELLS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000386367000009 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374956 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Han, Xiuxun; Yang, Shengrong |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Wen,Han, Xiuxun,Zhao, Yun,et al. Pre-annealing induced oxide barrier to suppress the over-selenization of mo contact[J]. Journal of materials science-materials in electronics,2016,27(11):11188-11191. |
| APA | Li, Wen,Han, Xiuxun,Zhao, Yun,&Yang, Shengrong.(2016).Pre-annealing induced oxide barrier to suppress the over-selenization of mo contact.Journal of materials science-materials in electronics,27(11),11188-11191. |
| MLA | Li, Wen,et al."Pre-annealing induced oxide barrier to suppress the over-selenization of mo contact".Journal of materials science-materials in electronics 27.11(2016):11188-11191. |
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来源：中国科学院大学
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