Influence of doping in inp buffer on photoluminescence behavior of inpbi
文献类型：期刊论文
| 作者 | Wang, Peng1,2; Pan, Wenwu1,2; Cao, Chunfang1; Wu, Xiaoyan1,2; Wang, Shumin1; Gong, Qian1 |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2016-11-01 |
| 卷号 | 55期号:11页码:4 |
| ISSN号 | 0021-4922 |
| DOI | 10.7567/jjap.55.115503 |
| 通讯作者 | Gong, qian(qgong@mail.sim.ac.cn) |
| 英文摘要 | Inp1-xbix epilayers with 1.0% bismuth concentration were grown on inp(001) substrates by gas-source molecular beam epitaxy. silicon and beryllium were doped into the inp buffer layer, and their influences on the photoluminescence (pl) emission of inpbi were investigated. the pl emission of inpbi was found to be intensified by beryllium doping into the inp buffer layer. however, there was no influence of silicon doping. to investigate the reason for the pl intensity enhancement of inpbi, the carrier transport behavior at the interface was also discussed. (c) 2016 the japan society of applied physics |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; TEMPERATURE ; BISMUTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000386430300001 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374958 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Gong, Qian |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst& Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Sch Phys, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Peng,Pan, Wenwu,Cao, Chunfang,et al. Influence of doping in inp buffer on photoluminescence behavior of inpbi[J]. Japanese journal of applied physics,2016,55(11):4. |
| APA | Wang, Peng,Pan, Wenwu,Cao, Chunfang,Wu, Xiaoyan,Wang, Shumin,&Gong, Qian.(2016).Influence of doping in inp buffer on photoluminescence behavior of inpbi.Japanese journal of applied physics,55(11),4. |
| MLA | Wang, Peng,et al."Influence of doping in inp buffer on photoluminescence behavior of inpbi".Japanese journal of applied physics 55.11(2016):4. |
入库方式： iSwitch采集
来源：中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。