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Chinese Academy of Sciences Institutional Repositories Grid
Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization

文献类型:期刊论文

作者Huang, Yongliang1,2; Han, Anjun1; Wang, Xian1; Liu, Xiaohui1; Liu, Zhengxin1; Meng, Fanying1
刊名Materials letters
出版日期2016-11-01
卷号182页码:114-117
关键词Cigs Thin film Simultaneous selenization/sulfurization Tunable band gap S incorporation
ISSN号0167-577X
DOI10.1016/j.matlet.2016.06.104
通讯作者Meng, fanying(fymeng@mail.sim.ac.cn)
英文摘要The simultaneous selenization/sulfurization is investigated to fabricate cu(in, ga)(se,s)(2) thin films in the h2s/h2se/n-2 hybrid gas, and the optical band gap of cu(in, ga)(se,s)(2) thin film is adjusted from 1.05 ev to 1.22 ev by varying the concentration ratio of h2s/h2se. it is found that more s incorporates into the cigses phase when the h2s concentration is increased, which widens the band gap of cigses alloy. furthermore, the through-film element profile of the cigses films with different reaction time reveals that cigses film is ga-poor and s-poor during the initial reaction, and ga and s are redistributed during the subsequent reaction with a joint of h2s and h2se. (c) 2016 elsevier b.v. all rights reserved.
WOS关键词SURFACE SULFURIZATION ; SOLAR-CELLS
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000382338400029
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2375233
专题中国科学院大学
通讯作者Meng, Fanying
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 235 Chengbei Rd, Shanghai 201800, Peoples R China
2.Univ Chinese Acad Sci, 19A Yuquanlu, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Huang, Yongliang,Han, Anjun,Wang, Xian,et al. Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization[J]. Materials letters,2016,182:114-117.
APA Huang, Yongliang,Han, Anjun,Wang, Xian,Liu, Xiaohui,Liu, Zhengxin,&Meng, Fanying.(2016).Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization.Materials letters,182,114-117.
MLA Huang, Yongliang,et al."Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization".Materials letters 182(2016):114-117.

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来源:中国科学院大学

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