Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization
文献类型:期刊论文
作者 | Huang, Yongliang1,2; Han, Anjun1; Wang, Xian1; Liu, Xiaohui1; Liu, Zhengxin1; Meng, Fanying1 |
刊名 | Materials letters
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出版日期 | 2016-11-01 |
卷号 | 182页码:114-117 |
关键词 | Cigs Thin film Simultaneous selenization/sulfurization Tunable band gap S incorporation |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2016.06.104 |
通讯作者 | Meng, fanying(fymeng@mail.sim.ac.cn) |
英文摘要 | The simultaneous selenization/sulfurization is investigated to fabricate cu(in, ga)(se,s)(2) thin films in the h2s/h2se/n-2 hybrid gas, and the optical band gap of cu(in, ga)(se,s)(2) thin film is adjusted from 1.05 ev to 1.22 ev by varying the concentration ratio of h2s/h2se. it is found that more s incorporates into the cigses phase when the h2s concentration is increased, which widens the band gap of cigses alloy. furthermore, the through-film element profile of the cigses films with different reaction time reveals that cigses film is ga-poor and s-poor during the initial reaction, and ga and s are redistributed during the subsequent reaction with a joint of h2s and h2se. (c) 2016 elsevier b.v. all rights reserved. |
WOS关键词 | SURFACE SULFURIZATION ; SOLAR-CELLS |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000382338400029 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2375233 |
专题 | 中国科学院大学 |
通讯作者 | Meng, Fanying |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 235 Chengbei Rd, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquanlu, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, Yongliang,Han, Anjun,Wang, Xian,et al. Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization[J]. Materials letters,2016,182:114-117. |
APA | Huang, Yongliang,Han, Anjun,Wang, Xian,Liu, Xiaohui,Liu, Zhengxin,&Meng, Fanying.(2016).Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization.Materials letters,182,114-117. |
MLA | Huang, Yongliang,et al."Tuning the band gap of cu(in,ga)se-2 thin films by simultaneous selenization/sulfurization".Materials letters 182(2016):114-117. |
入库方式: iSwitch采集
来源:中国科学院大学
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