Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology
文献类型：期刊论文
| 作者 | Zheng Yunlong1,2; Dai Ruofan1,2; Chen Zhuojun1,2; Sun Shulong1,2; Wang Zheng1; Sang Zehua1; Lin Min1; Zou Shichang1 |
| 刊名 | Ieice electronics express
 |
| 出版日期 | 2016-06-25 |
| 卷号 | 13期号:12页码:11 |
| 关键词 | Direct measurement Heavy ion irradiation Silicon on insulator technology Single event transient Mosfet Radiation harden by design |
| ISSN号 | 1349-2543 |
| DOI | 10.1587/elex.13.20160424 |
| 通讯作者 | Zheng yunlong(liluoke@foxmail.com) |
| 英文摘要 | Many papers have confirmed that the single event vulnerability of semiconductor devices significantly increase with power supply voltage drop, rendering considerable challenges for the radiation harden design as per the development of moore's law. the higher the supply voltage of the chip scaling down, the greater severity of these problems. in this article, set pulse widths induced by heavy ion of t-gate 1.2v core and 3.3v io devices fabricated by a 130 nm partially depleted silicon-on-insulator technology were directly measured. we discovered that, by adjusting the design parameters and choosing an appropriate device w/l ratio, different power supply voltage soi devices are able to achieve the same sensitivity for the single event, irrespective of supply voltage. the distribution of set-pulse widths ranges from 210 to 735 ps under a constant let of 37.6 mev-cm(2)/mg, and the single event transient vulnerability of t-gate 1.2v core and 3.3v io devices is similar, which is instructive for the low-voltage and low-power circuit application. |
| WOS关键词 | HEAVY-ION ; SOI ; PROPAGATION |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| WOS记录号 | WOS:000381574000011 |
| 出版者 | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2375608 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zheng Yunlong |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng Yunlong,Dai Ruofan,Chen Zhuojun,et al. Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology[J]. Ieice electronics express,2016,13(12):11. |
| APA | Zheng Yunlong.,Dai Ruofan.,Chen Zhuojun.,Sun Shulong.,Wang Zheng.,...&Zou Shichang.(2016).Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology.Ieice electronics express,13(12),11. |
| MLA | Zheng Yunlong,et al."Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology".Ieice electronics express 13.12(2016):11. |
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来源：中国科学院大学
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