Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pan, Wenwu1,2; Zhang, Liyao1; Zhu, Liang3; Li, Yaoyao1; Chen, Xiren3; Wu, Xiaoyan1,2; Zhang, Fan1,4; Shao, Jun3; Wang, Shumin1,5 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2016-09-14 |
| 卷号 | 120期号:10页码:6 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.4962288 |
| 通讯作者 | Zhang, liyao(lyzhang@mail.sim.ac.cn) |
| 英文摘要 | Photoluminescence (pl) properties of in0.2ga0.8as/gaas0.96bi0.04/in0.2ga0.8as quantum well (qw) grown on gaas substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. the type-ii transition energy shifts from 1.149 ev to 1.192 ev when increasing the excitation power from 10 mw to 150 mw at 4.5 k, which was ascribed to the band-bending effect. on the other hand, the type-ii pl quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. an 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-ii qw. the calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 mev and 50 mev, respectively, are deduced. published by aip publishing. |
| WOS关键词 | TEMPERATURE-DEPENDENCE ; GAAS1-XBIX ; DIODES ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; ABSORPTION ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000384247900032 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2375736 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhang, Liyao |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden |
| 推荐引用方式 GB/T 7714 | Pan, Wenwu,Zhang, Liyao,Zhu, Liang,et al. Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy[J]. Journal of applied physics,2016,120(10):6. |
| APA | Pan, Wenwu.,Zhang, Liyao.,Zhu, Liang.,Li, Yaoyao.,Chen, Xiren.,...&Wang, Shumin.(2016).Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy.Journal of applied physics,120(10),6. |
| MLA | Pan, Wenwu,et al."Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy".Journal of applied physics 120.10(2016):6. |
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来源：中国科学院大学
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