Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells
文献类型：期刊论文
| 作者 | Zhu, Fangzhou1,2; Wang, Dongliang3; Bian, Jiantao1; Liu, Jinning1; Liu, Zhengxin1,2 |
| 刊名 | Solar energy materials and solar cells
 |
| 出版日期 | 2016-12-01 |
| 卷号 | 157页码:74-78 |
| 关键词 | Phosphorus diffusion gettering N-type silicon wafer Minority carrier lifetime Heterojunction solar cell |
| ISSN号 | 0927-0248 |
| DOI | 10.1016/j.solmat.2016.05.023 |
| 通讯作者 | Liu, zhengxin(z.x.liu@mail.sim.ac.cn) |
| 英文摘要 | Phosphorous diffusion gettering (pdg) for different kinds of commercial n-type cz silicon wafers was investigated for the application in silicon heterojunction (shj) solar cells. it was found that surplus phosphorus diffusion was effective in improving the effective minority carrier lifetime (tau(eff)). highest tau(eff) was obtained at the optimal diffusion temperature of 840 degrees c, which was almost independent on the diffusion duration at a wide region from 5 to 60 min, corresponding to a sheet resistance region from 85 to 21 omega/sq. the segregation coefficient and gettering sites were considered responsible for the gettering mechanism. when the optimized pdg process was applied to shj solar cells with three different groups of commercial si wafers, the average efficiencies were improved from 21.2% to 22.4%, 21.5% to 22.4%, and 22.1% to 22.5%, respectively, where the efficiency gains were mainly contributed by the improvements of open-circuit voltage and fill factor. (c) 2016 elsevier b.v. all rights reserved. |
| WOS关键词 | MULTICRYSTALLINE SILICON ; IRON |
| WOS研究方向 | Energy & Fuels ; Materials Science ; Physics |
| WOS类目 | Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000384391700010 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2375752 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, Zhengxin |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.State Key Lab Photovolta Sci & Technol SKL PVST, Trinasolar 213031, Changzhou, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, Fangzhou,Wang, Dongliang,Bian, Jiantao,et al. Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells[J]. Solar energy materials and solar cells,2016,157:74-78. |
| APA | Zhu, Fangzhou,Wang, Dongliang,Bian, Jiantao,Liu, Jinning,&Liu, Zhengxin.(2016).Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells.Solar energy materials and solar cells,157,74-78. |
| MLA | Zhu, Fangzhou,et al."Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells".Solar energy materials and solar cells 157(2016):74-78. |
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来源：中国科学院大学
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