中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets

文献类型:期刊论文

作者Huang, Jian-Qiang1,2; He, Wei-Wei1,2; Chen, Jing1; Luo, Jie-Xin1; Lu, Kai1,2; Chai, Zhan1
刊名Chinese physics letters
出版日期2016-09-01
卷号33期号:7页码:4
ISSN号0256-307X
DOI10.1088/0256-307x/33/9/096101
通讯作者Chen, jing(jchen@mail.sim.ac.cn)
英文摘要On the basis of a detailed discussion of the development of total ionizing dose (tid) effect model, a new commercial-model-independent tid modeling approach for partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors is developed. an exponential approximation is proposed to simplify the trap charge calculation. irradiation experiments with co-60 gamma rays for io and core devices are performed to validate the simulation results. an excellent agreement of measurement with the simulation results is observed.
WOS关键词SHALLOW-TRENCH ISOLATION ; TECHNOLOGIES
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000383778000021
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2376072
专题中国科学院大学
通讯作者Chen, Jing
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Huang, Jian-Qiang,He, Wei-Wei,Chen, Jing,et al. New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets[J]. Chinese physics letters,2016,33(7):4.
APA Huang, Jian-Qiang,He, Wei-Wei,Chen, Jing,Luo, Jie-Xin,Lu, Kai,&Chai, Zhan.(2016).New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets.Chinese physics letters,33(7),4.
MLA Huang, Jian-Qiang,et al."New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets".Chinese physics letters 33.7(2016):4.

入库方式: iSwitch采集

来源:中国科学院大学

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。