New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets
文献类型:期刊论文
作者 | Huang, Jian-Qiang1,2; He, Wei-Wei1,2; Chen, Jing1; Luo, Jie-Xin1; Lu, Kai1,2; Chai, Zhan1 |
刊名 | Chinese physics letters
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出版日期 | 2016-09-01 |
卷号 | 33期号:7页码:4 |
ISSN号 | 0256-307X |
DOI | 10.1088/0256-307x/33/9/096101 |
通讯作者 | Chen, jing(jchen@mail.sim.ac.cn) |
英文摘要 | On the basis of a detailed discussion of the development of total ionizing dose (tid) effect model, a new commercial-model-independent tid modeling approach for partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors is developed. an exponential approximation is proposed to simplify the trap charge calculation. irradiation experiments with co-60 gamma rays for io and core devices are performed to validate the simulation results. an excellent agreement of measurement with the simulation results is observed. |
WOS关键词 | SHALLOW-TRENCH ISOLATION ; TECHNOLOGIES |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000383778000021 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376072 |
专题 | 中国科学院大学 |
通讯作者 | Chen, Jing |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, Jian-Qiang,He, Wei-Wei,Chen, Jing,et al. New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets[J]. Chinese physics letters,2016,33(7):4. |
APA | Huang, Jian-Qiang,He, Wei-Wei,Chen, Jing,Luo, Jie-Xin,Lu, Kai,&Chai, Zhan.(2016).New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets.Chinese physics letters,33(7),4. |
MLA | Huang, Jian-Qiang,et al."New method of total ionizing dose compact modeling in partially depleted silicon-on-insulator mosfets".Chinese physics letters 33.7(2016):4. |
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来源:中国科学院大学
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