中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High luminance of cuins2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

文献类型:期刊论文

作者Li, Jingling1,2; Jin, Hu1,2; Wang, Kelai1,3; Xie, Dehui1,3,4; Xu, Dehua1,2,4; Xu, Xueqing1,2; Xu, Gang1,2
刊名Rsc advances
出版日期2016
卷号6期号:76页码:72462-72470
ISSN号2046-2069
DOI10.1039/c6ra14241a
通讯作者Xu, xueqing(xuxq@ms.giec.ac.cn)
英文摘要In this work, all-solution processed, multi-layer yellow quantum dot light emitting diodes (qleds), consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of cuins2/zns (zcis) qds, and electron transport layer of zno nanoparticles, are fabricated. to improve the carrier-balance in qleds, a ligand-exchange strategy is employed to replace n-dodecanethiol that caps the surface of cuins2/zns quantum dots with 2-ethylhexanethiol. after this processing, improvement of current efficiency and external quantum efficiency of qleds is achieved. the optimized diodes exhibit a maximum luminance of 2354 cd m(-2) and an external quantum efficiency of 0.63%, together with a lower turn-on voltage (decreases from 3.1 v to 2.7 v) using these ligand-exchanged qds as emitting materials. furthermore, cuins2-based qleds in our study exhibit color retainability with increasing voltage and prolonged use, and show great promise for practical application.
WOS关键词ONE-POT SYNTHESIS ; ELECTRON INJECTION ; ZNO NANOPARTICLES ; AQUEOUS-SOLUTION ; S NANOCRYSTALS ; EFFICIENT ; ELECTROLUMINESCENCE ; PHOTOLUMINESCENCE ; TERNARY ; BRIGHT
WOS研究方向Chemistry
WOS类目Chemistry, Multidisciplinary
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000381513300078
URI标识http://www.irgrid.ac.cn/handle/1471x/2376170
专题中国科学院大学
通讯作者Xu, Xueqing
作者单位1.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangzhou 510640, Guangdong, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
推荐引用方式
GB/T 7714
Li, Jingling,Jin, Hu,Wang, Kelai,et al. High luminance of cuins2-based yellow quantum dot light emitting diodes fabricated by all-solution processing[J]. Rsc advances,2016,6(76):72462-72470.
APA Li, Jingling.,Jin, Hu.,Wang, Kelai.,Xie, Dehui.,Xu, Dehua.,...&Xu, Gang.(2016).High luminance of cuins2-based yellow quantum dot light emitting diodes fabricated by all-solution processing.Rsc advances,6(76),72462-72470.
MLA Li, Jingling,et al."High luminance of cuins2-based yellow quantum dot light emitting diodes fabricated by all-solution processing".Rsc advances 6.76(2016):72462-72470.

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来源:中国科学院大学

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