Three-dimensional simulations of reset operation in phase-change random access memory with blade-type like phase change layer by finite element modeling
文献类型：期刊论文
| 作者 | Jin, Qiu-Xue1,2,3; Liu, Bo1,2; Liu, Yan1,2; Wang, Wei-Wei1,2,3; Wang, Heng1,2,3; Xu, Zhen1,2,3; Gao, Dan1,2,3; Wang, Qing1,2,3; Xia, Yang-Yang1,2,3; Song, Zhi-Tang1,2 |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 33期号:7页码:4 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307x/33/9/098502 |
| 通讯作者 | Liu, bo(liubo@mail.sim.ac.cn) |
| 英文摘要 | An optimized device structure for reducing the reset current of phase-change random access memory (pcram) with blade-type like (btl) phase change layer is proposed. the electrical thermal analysis of the btl cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during reset operation. the simulation results show that the programming region of the phase change layer in the btl cell is much smaller, and thermal electrical distributions of the btl cell are more concentrated on the tin/gst interface. the results indicate that the btl cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the reset current from 0.67ma to 0.32 ma. therefore, the btl cell will be appropriate for high performance pcram device with lower power consumption and lower reset current. |
| WOS关键词 | STORAGE ; DEVICE ; MEDIA |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000383778000032 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376173 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, Bo |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, Qiu-Xue,Liu, Bo,Liu, Yan,et al. Three-dimensional simulations of reset operation in phase-change random access memory with blade-type like phase change layer by finite element modeling[J]. Chinese physics letters,2016,33(7):4. |
| APA | Jin, Qiu-Xue.,Liu, Bo.,Liu, Yan.,Wang, Wei-Wei.,Wang, Heng.,...&Feng, Song-Lin.(2016).Three-dimensional simulations of reset operation in phase-change random access memory with blade-type like phase change layer by finite element modeling.Chinese physics letters,33(7),4. |
| MLA | Jin, Qiu-Xue,et al."Three-dimensional simulations of reset operation in phase-change random access memory with blade-type like phase change layer by finite element modeling".Chinese physics letters 33.7(2016):4. |
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来源：中国科学院大学
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