Generation and the role of dislocations in single-crystalline phase-change in2se3 nanowires under electrical pulses
文献类型：期刊论文
| 作者 | Mafi, Elham1; Tao, Xin1; Zhu, Wenguang2,3,4; Gao, Yanfei5,6; Wang, Chongmin7; Gu, Yi1 |
| 刊名 | Nanotechnology
 |
| 出版日期 | 2016-08-19 |
| 卷号 | 27期号:33页码:8 |
| 关键词 | Phase-change materials Transmission electron microscopy Scanning kelvin probe microscopy |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/0957-4484/27/33/335704 |
| 通讯作者 | Gu, yi(yigu@wsu.edu) |
| 英文摘要 | We report the observation of the generation of dislocations in single-crystal phase-change in2se3 nanowires under electrical pulses and the impact of these dislocations on electrical properties. particularly, we correlated the atomic-scale structural characteristics with local electrical resistance variations, by performing transmission electron microscopy and scanning kelvin probe microscopy on the same nanowires. by coupling the experimental results with first-principles density functional theory calculations, we show that the immobile dislocations are generated via vacancy condensations. importantly, these dislocations lead to several orders of magnitude increase in the electrical resistance, while maintaining the single crystallinity of the lattice. these results significantly advance the fundamental understanding of the structure-property relation in this phase-change material under transient electrical excitations. from a practical perspective, the significant increase in the electrical resistance, driven by the formation of dislocations, can be exploited as a new electronic state in the single-crystalline phase in this phase-change material. |
| WOS关键词 | AUGMENTED-WAVE METHOD ; CHANGE MEMORY ; TRANSFORMATION ; AMORPHIZATION ; SEMICONDUCTORS ; VACANCIES ; DRIVEN |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000383780500020 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376175 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Gu, Yi |
| 作者单位 | 1.Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA 2.Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China 3.Univ Sci & Technol China, Chinese Acad Sci, Sch Phys Sci, Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China 4.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China 5.Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA 6.Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA 7.Pacific Northwest Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA |
| 推荐引用方式 GB/T 7714 | Mafi, Elham,Tao, Xin,Zhu, Wenguang,et al. Generation and the role of dislocations in single-crystalline phase-change in2se3 nanowires under electrical pulses[J]. Nanotechnology,2016,27(33):8. |
| APA | Mafi, Elham,Tao, Xin,Zhu, Wenguang,Gao, Yanfei,Wang, Chongmin,&Gu, Yi.(2016).Generation and the role of dislocations in single-crystalline phase-change in2se3 nanowires under electrical pulses.Nanotechnology,27(33),8. |
| MLA | Mafi, Elham,et al."Generation and the role of dislocations in single-crystalline phase-change in2se3 nanowires under electrical pulses".Nanotechnology 27.33(2016):8. |
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来源：中国科学院大学
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