Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition
文献类型：期刊论文
| 作者 | Li, Jun1,2; Zhuang, Jianing3; Shen, Chengmin1,4; Tian, Yuan1; Que, Yande1,2; Ma, Ruisong1,2; Pan, Jinbo1,2; Zhang, Yanfang1,2; Wang, Yeliang1,4; Du, Shixuan1,4 |
| 刊名 | Nano research
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 9期号:9页码:2803-2810 |
| 关键词 | Graphene Chemical vapor deposition (cvd) Bilayer Growth mechanism |
| ISSN号 | 1998-0124 |
| DOI | 10.1007/s12274-016-1169-8 |
| 通讯作者 | Shen, chengmin(cmshen@iphy.ac.cn) ; Ding, feng(feng.ding@polyu.edu.hk) ; Gao, hong-jun(hjgao@iphy.ac.cn) |
| 英文摘要 | High-quality single-layered and bilayered graphene (slg and blg) was synthesized on copper foil surfaces by controllable chemical vapor deposition (cvd). impurity nanoparticles formed on the copper foil surface by hightemperature annealing were found to play a crucial role in the growth of blg. analysis of energy-dispersive spectrometry (eds) data indicated that these nanoparticles consisted of silicon and aluminum. according to the inverted wedding cake model, these nanoparticles served as nucleation centers for blg growth and the free space between a nanoparticle and graphene served as the center of c injection for the continuous growth of the adlayer beneath the top layer. by combining phase-field theory simulations, we confirmed the mechanism of blg growth and revealed more details about it in comparison with slg growth. for the first time, this study led to a complete understanding of the blg growth mechanism from nucleation to continuous growth in the cvd process, and it has opened a door to the thickness-controllable synthesis of graphene. |
| WOS关键词 | GROWTH ; SUBSTRATE |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000382882200029 |
| 出版者 | TSINGHUA UNIV PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376193 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Shen, Chengmin; Ding, Feng; Gao, Hong-Jun |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China 4.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Jun,Zhuang, Jianing,Shen, Chengmin,et al. Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition[J]. Nano research,2016,9(9):2803-2810. |
| APA | Li, Jun.,Zhuang, Jianing.,Shen, Chengmin.,Tian, Yuan.,Que, Yande.,...&Gao, Hong-Jun.(2016).Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition.Nano research,9(9),2803-2810. |
| MLA | Li, Jun,et al."Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition".Nano research 9.9(2016):2803-2810. |
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来源：中国科学院大学
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