Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application
文献类型：期刊论文
| 作者 | Ji, Xinglong1,2; Wu, Liangcai1; Cao, Liangliang1; Zhu, Min1; Rao, Feng1; Zheng, Yonghui1,2; Zhou, Wangyang1,2; Song, Zhitang1; Feng, Songlin1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2015-06-15 |
| 卷号 | 106期号:24页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4922505 |
| 通讯作者 | Wu, liangcai(wuliangcai@mail.sim.ac.cn) |
| 英文摘要 | In this paper, v0.21sb2te3 (vst) has been proposed for phase-change memory applications. with vanadium incorporating, vst has better thermal stability than sb2te3 and can maintain in amorphous phase at room temperature. two resistance steps were observed in temperature dependent resistance measurements. by real-time observing the temperature dependent lattice structure evolution, vst presents as a homogenous phase throughout the whole thermal process. combining hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of vst material. then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. furthermore, the applicability of vst is demonstrated by resistance-voltage measurement, and the phase transition of vst can be triggered by a 15 ns electric pulse. in addition, endurance up to 2: 7 x 10(4) cycles makes vst a promising candidate for phase-change memory applications. (c) 2015 aip publishing llc. |
| WOS关键词 | TI-SB-TE ; STORAGE ; FILMS ; POWER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000356618700031 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376482 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Wu, Liangcai |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ji, Xinglong,Wu, Liangcai,Cao, Liangliang,et al. Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application[J]. Applied physics letters,2015,106(24):5. |
| APA | Ji, Xinglong.,Wu, Liangcai.,Cao, Liangliang.,Zhu, Min.,Rao, Feng.,...&Feng, Songlin.(2015).Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application.Applied physics letters,106(24),5. |
| MLA | Ji, Xinglong,et al."Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application".Applied physics letters 106.24(2015):5. |
入库方式： iSwitch采集
来源：中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。