Direct growth of sb2te3 on graphene by atomic layer deposition
文献类型：期刊论文
| 作者 | Zheng, Li1,2; Cheng, Xinhong1; Cao, Duo1,2; Wang, Qian1,2; Wang, Zhongjian1; Xia, Chao1,2; Shen, Lingyan1,2; Yu, Yuehui1; Shen, Dashen3 |
| 刊名 | Rsc advances
 |
| 出版日期 | 2015 |
| 卷号 | 5期号:50页码:40007-40011 |
| ISSN号 | 2046-2069 |
| DOI | 10.1039/c5ra04698j |
| 通讯作者 | Cheng, xinhong(xh_cheng@mail.sim.ac.cn) |
| 英文摘要 | The direct growth of sb2te3 on graphene is achieved by atomic layer deposition (ald) with pre-(me3si)(2)te treatment. the results of atomic force microscopy (afm) indicate volmer-weber island growth is the dominant growth mode for ald sb2te3 growth on graphene. high resolution transmission electron microscopy (hrtem) analysis reveals perfect crystal structures of sb2te3 on graphene and no interface layer generation. the characterization of x-ray photoelectron spectroscopy (xps) implies the impermeability of graphene can maintain sb2te3 intact and isolate the adverse effects of substrates. our study provides a step forward to grow high quality sb2te3 at low temperature and expand the potential applications of graphene in ald techniques. |
| WOS关键词 | TOPOLOGICAL INSULATORS ; THIN-FILMS ; BI2TE3 |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000354211100046 |
| 出版者 | ROYAL SOC CHEMISTRY |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376511 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Cheng, Xinhong |
| 作者单位 | 1.Chinese Acad Sci, Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Univ Alabama, Huntsville, AL 35899 USA |
| 推荐引用方式 GB/T 7714 | Zheng, Li,Cheng, Xinhong,Cao, Duo,et al. Direct growth of sb2te3 on graphene by atomic layer deposition[J]. Rsc advances,2015,5(50):40007-40011. |
| APA | Zheng, Li.,Cheng, Xinhong.,Cao, Duo.,Wang, Qian.,Wang, Zhongjian.,...&Shen, Dashen.(2015).Direct growth of sb2te3 on graphene by atomic layer deposition.Rsc advances,5(50),40007-40011. |
| MLA | Zheng, Li,et al."Direct growth of sb2te3 on graphene by atomic layer deposition".Rsc advances 5.50(2015):40007-40011. |
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来源：中国科学院大学
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