Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches
文献类型:期刊论文
作者 | Zhou Tian-Yu1,2; Liu Xue-Chao1; Huang Wei1; Dai Chong-Chong1,2; Zheng Yan-Qing1; Shi Er-Wei1 |
刊名 | Chinese physics b
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出版日期 | 2015-04-01 |
卷号 | 24期号:4页码:5 |
关键词 | Photoconductive semiconductor switch Sic N(+)-azo subcontact layer On-state resistance |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/24/4/044209 |
通讯作者 | Liu xue-chao(xcliu@mail.sic.ac.cn) |
英文摘要 | Al-doped zno thin film (azo) is used as a subcontact layer in 6h-sic photoconductive semiconductor switches (pcsss) to reduce the on-state resistance and optimize the device structure. our photoconductive test shows that the on-state resistance of lateral pcss with an n(+)-azo subcontact layer is 14.7% lower than that of pcss without an n(+)-azo subcontact layer. this occurs because a heavy-doped azo thin film can improve ohmic contact properties, reduce contact resistance, and alleviate joule heating. combined with the high transparance characteristic at 532 nm of azo film, vertical structural pcss devices are designed and their structural superiority is discussed. this paper provides a feasible route for fabricating high performance sic pcss by using conductive and transparent zno-based materials. |
WOS关键词 | SILICON-CARBIDE ; HIGH-POWER ; SEMICONDUCTOR SWITCHES ; GROWTH ; ZNO ; CRYSTALS |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000354727300037 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376526 |
专题 | 中国科学院大学 |
通讯作者 | Liu Xue-Chao |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,et al. Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches[J]. Chinese physics b,2015,24(4):5. |
APA | Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,Dai Chong-Chong,Zheng Yan-Qing,&Shi Er-Wei.(2015).Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches.Chinese physics b,24(4),5. |
MLA | Zhou Tian-Yu,et al."Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches".Chinese physics b 24.4(2015):5. |
入库方式: iSwitch采集
来源:中国科学院大学
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