Defining a parameter of plasma-enhanced cvd to characterize the effect of silicon-surface passivation in heterojunction solar cells
文献类型：期刊论文
| 作者 | Guo, Wanwu1,2,3; Zhang, Liping1; Bao, Jian2; Meng, Fanying1; Liu, Jinning1; Wang, Dongliang2; Bian, Jieyu1; Liu, Wenzhu1; Feng, Zhiqiang2; Verlinden, Pierre J.2 |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2015-04-01 |
| 卷号 | 54期号:4页码:4 |
| ISSN号 | 0021-4922 |
| DOI | 10.7567/jjap.54.041402 |
| 通讯作者 | Guo, wanwu() |
| 英文摘要 | The hydrogen content (c-h) and microstructure of a hydrogenated amorphous-silicon (a-si:h) layer fabricated by plasma-enhanced chemical vapor deposition (pecvd) were analyzed to determine the effect of surface passivation on crystalline silicon (c-si). the ratio of radio-frequency power to gas pressure (c-pp in w.pa-1) of the pecvd system is defined as a characterization parameter. it was found that c-h and the passivation of a-si:h layers were sensitively affected by c-pp. however, c-h remained almost constant at the same c-pp even though the pecvd power and pressure were widely varied. we determined that an optimal region exists in the range of 0.75 < c-pp < 1.25, where a high implied open-circuit voltage of 732mv was obtained from a passivated a-si:h/c-si/a-si:h structure, indicating that c-pp was a useful parameter for characterizing the surface passivation effect of a a-si:h layer on c-si. (c) 2015 the japan society of applied physics |
| WOS关键词 | A-SI-H ; HYDROGENATED AMORPHOUS-SILICON ; CHEMICAL-VAPOR-DEPOSITION ; ION ENERGY-DISTRIBUTIONS ; GLOW-DISCHARGE ; THIN-FILMS ; STRUCTURAL-PROPERTIES ; ELECTRON-TEMPERATURE ; OPTICAL-EMISSION ; RF-DISCHARGES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000354743200014 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376545 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Guo, Wanwu |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China 2.Trina Solar, State Key Lab PV Sci & Technol SKL PVST, Changzhou 213031, Jiangsu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Wanwu,Zhang, Liping,Bao, Jian,et al. Defining a parameter of plasma-enhanced cvd to characterize the effect of silicon-surface passivation in heterojunction solar cells[J]. Japanese journal of applied physics,2015,54(4):4. |
| APA | Guo, Wanwu.,Zhang, Liping.,Bao, Jian.,Meng, Fanying.,Liu, Jinning.,...&Liu, Zhengxin.(2015).Defining a parameter of plasma-enhanced cvd to characterize the effect of silicon-surface passivation in heterojunction solar cells.Japanese journal of applied physics,54(4),4. |
| MLA | Guo, Wanwu,et al."Defining a parameter of plasma-enhanced cvd to characterize the effect of silicon-surface passivation in heterojunction solar cells".Japanese journal of applied physics 54.4(2015):4. |
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来源：中国科学院大学
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