Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up
文献类型：期刊论文
| 作者 | Chen Rui1,2; Han Jian-Wei1; Zheng Han-Sheng1,2; Yu Yong-Tao1,2; Shangguang Shi-Peng1; Feng Guo-Qiang1; Ma Ying-Qi1 |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2015-04-01 |
| 卷号 | 24期号:4页码:6 |
| 关键词 | Single event latch-up Transient-induced latch-up Electro-static discharge Pulsed laser |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/24/4/046103 |
| 通讯作者 | Chen rui(chenrui632@sina.com) |
| 英文摘要 | By using the pulsed laser single event effect facility and electro-static discharge (esd) test system, the characteristics of the "high current", relation with external stimulus and relevance to impacted modes of single event latch-up (sel) and transient-induced latch-up (tlu) are studied, respectively, for a 12-bit complementary metal-oxide semiconductor (cmos) analog-to-digital converter. furthermore, the sameness and difference in physical mechanism between "high current" induced by sel and that by tlu are disclosed in this paper. the results show that the minority carrier diffusion in the pnpn structure of the cmos device which initiates the active parasitic npn and pnp transistors is the common reason for the "high current" induced by sel and for that by tlu. however, for sel, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for tlu. |
| WOS关键词 | SIMULATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000354727300046 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376548 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Chen Rui |
| 作者单位 | 1.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen Rui,Han Jian-Wei,Zheng Han-Sheng,et al. Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up[J]. Chinese physics b,2015,24(4):6. |
| APA | Chen Rui.,Han Jian-Wei.,Zheng Han-Sheng.,Yu Yong-Tao.,Shangguang Shi-Peng.,...&Ma Ying-Qi.(2015).Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up.Chinese physics b,24(4),6. |
| MLA | Chen Rui,et al."Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up".Chinese physics b 24.4(2015):6. |
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来源：中国科学院大学
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