Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures
文献类型：期刊论文
| 作者 | Cao, Duo1,2,4; Cheng, Xinhong1; Xie, Ya-Hong2; Zheng, Li1,2,4; Wang, Zhongjian1; Yu, Xinke2; Wang, Jia2; Shen, Dashen3; Yu, Yuehui1 |
| 刊名 | Rsc advances
 |
| 出版日期 | 2015 |
| 卷号 | 5期号:47页码:37881-37886 |
| ISSN号 | 2046-2069 |
| DOI | 10.1039/c5ra04728e |
| 通讯作者 | Cheng, xinhong(xh_cheng@mail.sim.ac.cn) |
| 英文摘要 | Aluminum nitride (aln) films have been deposited on algan/gan heterostructure substrates by plasma enhanced atomic layer deposition (peald). different annealing treatments were adopted to change film structure and improve performance. chemical composition, crystallinity, and electrical properties were studied for aln films. the results show that some crystal grains appear in the films after annealing at a temperature of over 800 degrees c. the film crystalline quality increases as the annealing temperature rises. the n-o-al bond decomposes during the high temperature annealing in n-2, and some new n-al bonds are formed in the aln films. annealing promotes the elemental interdiffusion between the films and the substrates. high-temperature annealing at 1000 degrees c in a nitrogen atmosphere can effectively promote complete nitridation of the aln film, reduce the nitrogen vacancies, and cause the aln film to form a semiconductor-like structure. |
| WOS关键词 | NITRIDE THIN-FILMS ; ATOMIC LAYER DEPOSITION ; MOLECULAR-BEAM EPITAXY ; ALUMINUM NITRIDE ; PASSIVATION ; AMMONIA ; GROWTH ; HEMTS ; GAN |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000353653200092 |
| 出版者 | ROYAL SOC CHEMISTRY |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376565 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Cheng, Xinhong |
| 作者单位 | 1.Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA 3.Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, Duo,Cheng, Xinhong,Xie, Ya-Hong,et al. Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures[J]. Rsc advances,2015,5(47):37881-37886. |
| APA | Cao, Duo.,Cheng, Xinhong.,Xie, Ya-Hong.,Zheng, Li.,Wang, Zhongjian.,...&Yu, Yuehui.(2015).Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures.Rsc advances,5(47),37881-37886. |
| MLA | Cao, Duo,et al."Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures".Rsc advances 5.47(2015):37881-37886. |
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来源：中国科学院大学
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