Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers
文献类型：期刊论文
| 作者 | Liu, Linjie1,2,3,4; Jin, Lei5; Knoll, Lars1,2; Wirths, Stephan1,2; Buca, Dan1,2; Mussler, Gregor1,2; Hollaender, Bernhard1,2; Xu, Dawei1,2,3,4; Di, Zeng Feng3; Zhang, Miao3 |
| 刊名 | Microelectronic engineering
 |
| 出版日期 | 2015-04-02 |
| 卷号 | 137页码:88-91 |
| 关键词 | Germanosilicide Al mediation Strained sige |
| ISSN号 | 0167-9317 |
| DOI | 10.1016/j.mee.2014.11.022 |
| 通讯作者 | Zhao, qing-tai(q.zhao@fz-juelich.de) |
| 英文摘要 | We present a systematic investigation of the formation of ni germanosilicide layers on strained sige/si(100) substrates. homogeneous ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin al/ni multi-layers on sige. the morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of al percentage and annealing temperature. best results of ni germanosilicide layers are achieved at 400 degrees c with 20% al on fully strained sige layers with ge contents of 36 at.% and 45 at.%. the uniform layers show a ni-5(-si1-xgex)(3) phase. the compressive strain in the remaining sige layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility sige layers for device application. (c) 2014 elsevier b.v. all rights reserved. |
| WOS关键词 | SI1-XGEX ; MOSFETS |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000355047500017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376588 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhao, Qing-Tai |
| 作者单位 | 1.Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany 2.Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany |
| 推荐引用方式 GB/T 7714 | Liu, Linjie,Jin, Lei,Knoll, Lars,et al. Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers[J]. Microelectronic engineering,2015,137:88-91. |
| APA | Liu, Linjie.,Jin, Lei.,Knoll, Lars.,Wirths, Stephan.,Buca, Dan.,...&Zhao, Qing-Tai.(2015).Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers.Microelectronic engineering,137,88-91. |
| MLA | Liu, Linjie,et al."Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers".Microelectronic engineering 137(2015):88-91. |
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来源：中国科学院大学
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