Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates
文献类型：期刊论文
| 作者 | Xu, Hao1,2; Song, Yuxin1; Gong, Qian1; Pan, Wenwu1,2; Wu, Xiaoyan1,2; Wang, Shumin1,3 |
| 刊名 | Modern physics letters b
 |
| 出版日期 | 2015-06-10 |
| 卷号 | 29期号:15页码:10 |
| 关键词 | Topological insulator Bi2te3 Raman spectroscopy Resonant raman scattering Domain boundaries Electron-phonon interaction |
| ISSN号 | 0217-9849 |
| DOI | 10.1142/s021798491550075x |
| 通讯作者 | Xu, hao() |
| 英文摘要 | Bi2te3 has drawn great attention in recent years as both a topological insulator and the best thermoelectric material at room temperature. we report on raman spectroscopic study on bi2te3 thin films with thicknesses of 20-50 nm grown on gan by molecular beam epitaxy. all the four classical optical phonon modes are clearly revealed for the first time in ex situ raman for epitaxial bi2te3. unusual and infrared-active vibration modes are also observed and analyzed. in the resonant raman measurements, abnormal enhancement and suppression of different modes are studied. the interface modes caused by a large density of domain boundaries formed during coalescence of crystal islands with different lattice orientations and the frohlich electron-phonon interaction are found to play significant roles during the raman scattering processes. |
| WOS关键词 | GAAS-ALAS SUPERLATTICES ; BISMUTH TELLURIDE ; PHONONS ; GROWTH ; SCATTERING ; THICKNESS ; NANORODS ; BI2SE3 |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| 语种 | 英语 |
| WOS记录号 | WOS:000356064900004 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376717 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Xu, Hao |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden |
| 推荐引用方式 GB/T 7714 | Xu, Hao,Song, Yuxin,Gong, Qian,et al. Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates[J]. Modern physics letters b,2015,29(15):10. |
| APA | Xu, Hao,Song, Yuxin,Gong, Qian,Pan, Wenwu,Wu, Xiaoyan,&Wang, Shumin.(2015).Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates.Modern physics letters b,29(15),10. |
| MLA | Xu, Hao,et al."Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates".Modern physics letters b 29.15(2015):10. |
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来源：中国科学院大学
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