Study of photoluminescence spectra of si-rich sinx films
文献类型:期刊论文
作者 | Liu, YZ; Zhou, YQ; Shi, WQ; Zhao, LL; Sun, BY; Ye, TC |
刊名 | Materials letters
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出版日期 | 2004-07-01 |
卷号 | 58期号:19页码:2397-2400 |
关键词 | Photolumineseence Rapid thermal annealing (rta) Low pressure chemical vapor deposition (lpcvd) Silicon nitride Thin films Optical materials and properties |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2004.02.015 |
通讯作者 | Liu, yz(yzhenliu@yahoo.com) |
英文摘要 | The silicon-rich silicon nitride thin films were prepared by low pressure chemical vapor deposition (lpcvd) technique. greenish-blue visible photoluminescence (pl) were observed at room temperature, with six peaks at 2.97, 2.77, 2.55, 2.32, 2.10 and 1.90 ev, respectively. after the rapid thermal annealing (rta) process, the position of pl spectrum of thin film has no obvious shift, but relative intensity of some peaks has changed. we found that the abundance of si and some oxygen in the films, which introduce great amount of dangling bond defects, are the dominating factors leading to the strong room-temperature visible pl emission. a simple model of gap state was built to explain the pl mechanism of silicon nitride thin films. (c) 2004 elsevier b.v. all rights reserved. |
WOS关键词 | CHEMICAL VAPOR-DEPOSITION ; SILICON-NITRIDE ; POROUS SILICON ; THIN-FILMS ; ELECTROLUMINESCENCE ; LUMINESCENCE ; LASER |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000222105000015 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376883 |
专题 | 中国科学院大学 |
通讯作者 | Liu, YZ |
作者单位 | 1.Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100039, Peoples R China 2.Chinese Acad Sci, Microelect Res & Dev Ctr, Beijing 100010, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, YZ,Zhou, YQ,Shi, WQ,et al. Study of photoluminescence spectra of si-rich sinx films[J]. Materials letters,2004,58(19):2397-2400. |
APA | Liu, YZ,Zhou, YQ,Shi, WQ,Zhao, LL,Sun, BY,&Ye, TC.(2004).Study of photoluminescence spectra of si-rich sinx films.Materials letters,58(19),2397-2400. |
MLA | Liu, YZ,et al."Study of photoluminescence spectra of si-rich sinx films".Materials letters 58.19(2004):2397-2400. |
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来源:中国科学院大学
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