Mechanism of nodule growth in ion beam sputtering films
文献类型：期刊论文
| 作者 | Zhang, DP; Qi, HJ; Shao, JD; Fan, RY; Fan, ZX |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2005-03-01 |
| 卷号 | 54期号:3页码:1385-1389 |
| 关键词 | Nodular defect Zirconium films Diffusion limited aggregation model |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhang, dp(zdp@siom.ac.cn) |
| 英文摘要 | Zirconium single-layer films were prepared by ion beam sputtering method. by using a novel designed substrate holder in pre-planting seeds method, the growth process of the nodular defects in thin films was studied. with the help of high resolution optical microscopy and electron scanning microcopy, the phenomenon that the nodules nucleation exhibits fractal characters in their initial growth period was observed. by using the molecular dynamics theory and diffusion limited aggregation model of film growth, the fractal phenomenon of the nodule nucleation was well explained. |
| WOS关键词 | DEFECTS ; AGGREGATION ; DIFFUSION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000227786300067 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2376996 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhang, DP |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, DP,Qi, HJ,Shao, JD,et al. Mechanism of nodule growth in ion beam sputtering films[J]. Acta physica sinica,2005,54(3):1385-1389. |
| APA | Zhang, DP,Qi, HJ,Shao, JD,Fan, RY,&Fan, ZX.(2005).Mechanism of nodule growth in ion beam sputtering films.Acta physica sinica,54(3),1385-1389. |
| MLA | Zhang, DP,et al."Mechanism of nodule growth in ion beam sputtering films".Acta physica sinica 54.3(2005):1385-1389. |
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来源：中国科学院大学
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