All-epitaxial growth of single-crystalline ba-0.sr-6(0).4tio3/ir/mgo/si heterostructures
文献类型：期刊论文
| 作者 | Chen, TL; Li, XM; Wu, WB; Yao, SD; Wang, K |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-11-15 |
| 卷号 | 285期号:1-2页码:1-5 |
| 关键词 | Growth modes Reflection high energy electron diffraction Laser epitaxy Oxides Perovskites Dielectric materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.08.014 |
| 通讯作者 | Li, xm(lixm@mail.sic.ac.cn) |
| 英文摘要 | Crystalline quality of thin films can be mediated by their growth modes and crystallographic orientations. normally, a growth mode of layer-by-layer can effectively suppress formations of defects (such as domain walls, grain boundaries, column-structures, dislocations, etc.) in thin films, reduce films' surface roughness, and consequently, promote films' crystallinity. such a film grown by layer-by-layer growth mode may exhibit less defects and fiat surfaces, even presenting a single-crystalline nature (single domain). in this paper, we have characterized the crystallinity of pulsed-laser-deposited ba0.6sr0.4tio3/ir/mgo/si heterostructures by x-ray diffraction, atomic force microscopy, reflection high-energy electron diffraction, rutherford backscattering spectrometry and transmission electron microscopy. these investigations show that the heterostructures exhibit not only an epitaxial layer-by-layer growth mode but also a single-crystalline nature. this work demonstrates an effective way in monolithic integration of ba0.6sr0.4tio3 with silicon for frequency agile devices. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | THIN-FILMS ; MGO FILMS ; SI(100) ; BUFFER ; LAYERS ; PLD |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000233152500001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2377064 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Li, XM |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Shanghai 200050, Peoples R China 3.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China 4.Peking Univ, Sch Phys, Dept Tech Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, TL,Li, XM,Wu, WB,et al. All-epitaxial growth of single-crystalline ba-0.sr-6(0).4tio3/ir/mgo/si heterostructures[J]. Journal of crystal growth,2005,285(1-2):1-5. |
| APA | Chen, TL,Li, XM,Wu, WB,Yao, SD,&Wang, K.(2005).All-epitaxial growth of single-crystalline ba-0.sr-6(0).4tio3/ir/mgo/si heterostructures.Journal of crystal growth,285(1-2),1-5. |
| MLA | Chen, TL,et al."All-epitaxial growth of single-crystalline ba-0.sr-6(0).4tio3/ir/mgo/si heterostructures".Journal of crystal growth 285.1-2(2005):1-5. |
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来源：中国科学院大学
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