Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates
文献类型:期刊论文
作者 | Chen, TL; Li, XM; Dong, R; Wang, Q; Chen, LD |
刊名 | Thin solid films
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出版日期 | 2005-09-22 |
卷号 | 488期号:1-2页码:98-102 |
关键词 | Pulse-laser deposition Reflection high energy electron diffraction Electrical properties and measurements X-ray diffraction |
ISSN号 | 0040-6090 |
DOI | 10.1016/j.tsf.2005.04.115 |
通讯作者 | Li, xm() |
英文摘要 | Investigated wag the epitaxial growth of la0.7ca0.3mno3 (lcmo)/ir/mgo multilayer on silicon substrate, which was prepared. by pulsed-laser deposition. the whole growth process of multilayer was in situ monitored by using reflection high-energy electron diffraction (r-heed). the reflection high-energy electron diffraction observations and x-ray diffraction analysis show that the lcmo film can be epitaxially grown on silicon substrate with an out-of-plane alignment of lcmo(001)//ir(001)//mgo(001)hsi (001). the field-induced polarity-dependent reversible resistance-switching was observed in the ag-lcmo-ir sandwich structure with a newly discovered accumulation-like phenomenon. further characterization through i-v measurements for "on"-/"off" -state shows that the resistance-switching phenomenon occurred in our ag-lcmo-ir sandwich structure should be attributed to a carrier-injection-ordering process. (c) 2005 elsevier b.v. all rights reserved. |
WOS关键词 | THIN-FILMS ; MAGNETORESISTANCE |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000231435300016 |
出版者 | ELSEVIER SCIENCE SA |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2377465 |
专题 | 中国科学院大学 |
通讯作者 | Li, XM |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Shanghai 200050, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, TL,Li, XM,Dong, R,et al. Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates[J]. Thin solid films,2005,488(1-2):98-102. |
APA | Chen, TL,Li, XM,Dong, R,Wang, Q,&Chen, LD.(2005).Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates.Thin solid films,488(1-2),98-102. |
MLA | Chen, TL,et al."Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates".Thin solid films 488.1-2(2005):98-102. |
入库方式: iSwitch采集
来源:中国科学院大学
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