中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates

文献类型:期刊论文

作者Chen, TL; Li, XM; Dong, R; Wang, Q; Chen, LD
刊名Thin solid films
出版日期2005-09-22
卷号488期号:1-2页码:98-102
关键词Pulse-laser deposition Reflection high energy electron diffraction Electrical properties and measurements X-ray diffraction
ISSN号0040-6090
DOI10.1016/j.tsf.2005.04.115
通讯作者Li, xm()
英文摘要Investigated wag the epitaxial growth of la0.7ca0.3mno3 (lcmo)/ir/mgo multilayer on silicon substrate, which was prepared. by pulsed-laser deposition. the whole growth process of multilayer was in situ monitored by using reflection high-energy electron diffraction (r-heed). the reflection high-energy electron diffraction observations and x-ray diffraction analysis show that the lcmo film can be epitaxially grown on silicon substrate with an out-of-plane alignment of lcmo(001)//ir(001)//mgo(001)hsi (001). the field-induced polarity-dependent reversible resistance-switching was observed in the ag-lcmo-ir sandwich structure with a newly discovered accumulation-like phenomenon. further characterization through i-v measurements for "on"-/"off" -state shows that the resistance-switching phenomenon occurred in our ag-lcmo-ir sandwich structure should be attributed to a carrier-injection-ordering process. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词THIN-FILMS ; MAGNETORESISTANCE
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000231435300016
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2377465
专题中国科学院大学
通讯作者Li, XM
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Grad Sch, Shanghai 200050, Peoples R China
推荐引用方式
GB/T 7714
Chen, TL,Li, XM,Dong, R,et al. Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates[J]. Thin solid films,2005,488(1-2):98-102.
APA Chen, TL,Li, XM,Dong, R,Wang, Q,&Chen, LD.(2005).Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates.Thin solid films,488(1-2),98-102.
MLA Chen, TL,et al."Field-induced resistance-switching of la0.7ca0.3mno3-delta films epitaxially grown on ir/mgo buffered si (001) substrates".Thin solid films 488.1-2(2005):98-102.

入库方式: iSwitch采集

来源:中国科学院大学

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