Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition
文献类型：期刊论文
| 作者 | Gu, JH; Zhou, YQ; Zhu, MF; Liu, FZ; Liu, JL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-12-15 |
| 卷号 | 285期号:4页码:491-498 |
| 关键词 | Atomic force microscopy Roughening Chemical vapor deposition process Semiconducting silicon |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.09.038 |
| 通讯作者 | Zhou, yq(yqzhou@gucas.ac.cn) |
| 英文摘要 | The scaling behavior of surface roughness evolution of hydrogenated microcrystalline silicon (pc-si:h) thin films prepared by hot-wire chemical vapor deposition (hwcvd) has been investigated using atomic force microscopy (afm). the scaling exponents are compared for the films deposited under the different deposition pressures (p-g). the roughness exponent alpha, the growth exponent p and the dynamic exponent z are about 0.85, 0.44 and 3.45 (1/z = 0.29), respectively, for the films prepared at p-g = 5 pa where gas phase reaction happened. at low deposition pressure of 0.3 pa where no gag phase reaction occurred alpha and beta are reduced to 0.65 to 0.35, respectively. the effect of shadowing effect, sticking coefficient and surface diffusion of the main radicals on the variations of scaling exponents under different pressures has been discussed. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | DECOMPOSITION ; MICROSCOPY ; FILAMENT ; SILANE ; SIH4 |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000234164600008 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2377872 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhou, YQ |
| 作者单位 | Chinese Acad Sci, Grad Sch, Coll Phys Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gu, JH,Zhou, YQ,Zhu, MF,et al. Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition[J]. Journal of crystal growth,2005,285(4):491-498. |
| APA | Gu, JH,Zhou, YQ,Zhu, MF,Liu, FZ,&Liu, JL.(2005).Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition.Journal of crystal growth,285(4),491-498. |
| MLA | Gu, JH,et al."Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition".Journal of crystal growth 285.4(2005):491-498. |
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来源：中国科学院大学
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