Perovskite structure development of pzn-pt thin films derived from an mod process
文献类型:期刊论文
作者 | He, XY; Ding, AL; Pan, XM; Yin, QR |
刊名 | Integrated ferroelectrics
![]() |
出版日期 | 2005 |
卷号 | 75页码:81-89 |
关键词 | Pzn-xpt thin film Pzt seed layer Mod process |
ISSN号 | 1058-4587 |
DOI | 10.1080/10584580500413343 |
通讯作者 | Ding, al() |
英文摘要 | Pzn-xpt (x = 0.4-0.9) thin films have been prepared from a metal-organic decomposition (mod) process on pt/ti/sio 2 /si substrates using a lattice-matched peroviskite pzt (53/47) thin film as a seed layer. the structure of pzn-xpt thin films have been characterized using xrd and afm. because of the epitaxial effect of the seed layer, the perovskite phase of the pzn-xpt thin film was significantly increased, especially in the films with high pzn content. films grown from a seed layer possess a smoother surface and homogenous morphology. they exhibit higher breakdown electric field, whereas films without a seed layer are found to give a relatively lower breakdown electric field. the mechanism of leakage current in the film has been analyzed. |
WOS关键词 | TITANATE |
WOS研究方向 | Engineering ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000234232100009 |
出版者 | TAYLOR & FRANCIS LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2378333 |
专题 | 中国科学院大学 |
通讯作者 | Ding, AL |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing, Peoples R China |
推荐引用方式 GB/T 7714 | He, XY,Ding, AL,Pan, XM,et al. Perovskite structure development of pzn-pt thin films derived from an mod process[J]. Integrated ferroelectrics,2005,75:81-89. |
APA | He, XY,Ding, AL,Pan, XM,&Yin, QR.(2005).Perovskite structure development of pzn-pt thin films derived from an mod process.Integrated ferroelectrics,75,81-89. |
MLA | He, XY,et al."Perovskite structure development of pzn-pt thin films derived from an mod process".Integrated ferroelectrics 75(2005):81-89. |
入库方式: iSwitch采集
来源:中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。