Low frequency noise study on short wavelength hgcdte photodiodes
文献类型：期刊论文
| 作者 | Huang, YC; Liu, DF; Liang, JS; Gong, HM |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2005-05-01 |
| 卷号 | 54期号:5页码:2261-2266 |
| 关键词 | Hgcdte Figure of merit Low frequency noise Deep level |
| ISSN号 | 1000-3290 |
| 通讯作者 | Huang, yc() |
| 英文摘要 | The current-voltage characteristics and the low frequency noise measured at 255-293k are reported. the figures of merit increase from 4.5 x 10(3) to 7 x 10(4) &uomega; cm(2) as the temperatures decreases. at low frequencies the noise mainly consists of flicker noise and generation recombination (g-r) noise, while at high frequencies thermal noise is the dominant component. the flicker noise current is proportional to the detector current at reverse bias, and the hooge parameter α(h) of the device is (3-7) x 10(-4). in addition, the fluctuation time constant τ of the g-r noise is extracted by fitting the curve of the low-frequency noise. therefore, the trap thermal activation energy of the deep level is obtained from the relation between τ and temperature. |
| WOS关键词 | 1/F NOISE ; (HG,CD)TE ; CENTERS ; SURFACE ; DIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000229049900054 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2378376 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Huang, YC |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, YC,Liu, DF,Liang, JS,et al. Low frequency noise study on short wavelength hgcdte photodiodes[J]. Acta physica sinica,2005,54(5):2261-2266. |
| APA | Huang, YC,Liu, DF,Liang, JS,&Gong, HM.(2005).Low frequency noise study on short wavelength hgcdte photodiodes.Acta physica sinica,54(5),2261-2266. |
| MLA | Huang, YC,et al."Low frequency noise study on short wavelength hgcdte photodiodes".Acta physica sinica 54.5(2005):2261-2266. |
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来源：中国科学院大学
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