Heteroepitaxy of cdte on tilting si(211) substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang, YZ; Chen, L; Wu, Y; Wu, J; Yu, MF; He, L |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-05-01 |
| 卷号 | 290期号:2页码:436-440 |
| 关键词 | High resolution x-ray diffraction Shear strain Molecular beam epitaxy Cdte Si |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.01.048 |
| 通讯作者 | Wang, yz(yuanzhang_wang@yahoo.com.cn) |
| 英文摘要 | Cdte(2 1 1)b epilayers were grown on 3 in si(2 1 1) substrates which misoriented 0-10 degrees toward [1 1 1] by molecular beam epitaxy (mbe). the relationship of x-ray double-crystal rocking curve (xrdcrc) fwhm and deflection angle from cdte(21 1) to si(21 1) was studied. for 4.2-4.5 degrees mu m cdte, the best value of fwhm 83 arcsec was achieved while deflection angle is 2.76 degrees. a fwhm wafer mapping indicated a good crystalline uniformity of 7.4 mu m cdte on tilting si(2 1 1), with fwhm range of 60-72 arcsec. the shear strains of these epilayers were analyzed, using reciprocal lattice points of symmetric and asymmetric reflections measured by high-resolution multi-crystal multi-reflection x-ray diffractometer (hrmcmrxd). it was found that the shear strain angle gamma((0 1 1)) of epilayer is effectively reduced by using proper tilting si(2 1 1) substrate. it was also proved that the lattice parameter of cdte(2 i i.)b is affected by the shear strain and thermal strain. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | GROWTH ; CDTE(111)B ; SURFACES ; SILICON ; MBE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000237156400023 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2378717 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Wang, YZ |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YZ,Chen, L,Wu, Y,et al. Heteroepitaxy of cdte on tilting si(211) substrates by molecular beam epitaxy[J]. Journal of crystal growth,2006,290(2):436-440. |
| APA | Wang, YZ,Chen, L,Wu, Y,Wu, J,Yu, MF,&He, L.(2006).Heteroepitaxy of cdte on tilting si(211) substrates by molecular beam epitaxy.Journal of crystal growth,290(2),436-440. |
| MLA | Wang, YZ,et al."Heteroepitaxy of cdte on tilting si(211) substrates by molecular beam epitaxy".Journal of crystal growth 290.2(2006):436-440. |
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来源：中国科学院大学
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