Modeling of amperometric immunosensor for cmos integration
文献类型:期刊论文
作者 | Li, Ce; Yang, Haigang; Xia, Shanhong; Bian, Chao |
刊名 | Rare metal materials and engineering
![]() |
出版日期 | 2006-12-01 |
卷号 | 35页码:439-442 |
关键词 | Amperometric Microelectrode Circuit model Potentiostat Folded-cascode |
ISSN号 | 1002-185X |
通讯作者 | Yang, haigang(yanghg@mail.ie.ac.cn) |
英文摘要 | A circuit model of the amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. the model parameters are extracted with several methods and verified by matlab and spice simulation. a cmos potentiostat circuit required for conditioning the amperometric immunosensor is also included in the circuit model. the mean square error norm of the simulated curve against the measured one is 8.65 x 10(-17). the whole circuit has been fabricated in a 0.35 mu m cmos process. |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000244457000137 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2379550 |
专题 | 中国科学院大学 |
通讯作者 | Yang, Haigang |
作者单位 | 1.Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing 100080, Peoples R China 2.Grad Univ, Chinese Acad Sci, Beijing 100039, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Ce,Yang, Haigang,Xia, Shanhong,et al. Modeling of amperometric immunosensor for cmos integration[J]. Rare metal materials and engineering,2006,35:439-442. |
APA | Li, Ce,Yang, Haigang,Xia, Shanhong,&Bian, Chao.(2006).Modeling of amperometric immunosensor for cmos integration.Rare metal materials and engineering,35,439-442. |
MLA | Li, Ce,et al."Modeling of amperometric immunosensor for cmos integration".Rare metal materials and engineering 35(2006):439-442. |
入库方式: iSwitch采集
来源:中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。