中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modeling of amperometric immunosensor for cmos integration

文献类型:期刊论文

作者Li, Ce; Yang, Haigang; Xia, Shanhong; Bian, Chao
刊名Rare metal materials and engineering
出版日期2006-12-01
卷号35页码:439-442
关键词Amperometric Microelectrode Circuit model Potentiostat Folded-cascode
ISSN号1002-185X
通讯作者Yang, haigang(yanghg@mail.ie.ac.cn)
英文摘要A circuit model of the amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. the model parameters are extracted with several methods and verified by matlab and spice simulation. a cmos potentiostat circuit required for conditioning the amperometric immunosensor is also included in the circuit model. the mean square error norm of the simulated curve against the measured one is 8.65 x 10(-17). the whole circuit has been fabricated in a 0.35 mu m cmos process.
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000244457000137
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2379550
专题中国科学院大学
通讯作者Yang, Haigang
作者单位1.Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing 100080, Peoples R China
2.Grad Univ, Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Li, Ce,Yang, Haigang,Xia, Shanhong,et al. Modeling of amperometric immunosensor for cmos integration[J]. Rare metal materials and engineering,2006,35:439-442.
APA Li, Ce,Yang, Haigang,Xia, Shanhong,&Bian, Chao.(2006).Modeling of amperometric immunosensor for cmos integration.Rare metal materials and engineering,35,439-442.
MLA Li, Ce,et al."Modeling of amperometric immunosensor for cmos integration".Rare metal materials and engineering 35(2006):439-442.

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来源:中国科学院大学

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