中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The study of ion mixed amorphous carbon films on single crystal silicon by c ion implantation

文献类型:期刊论文

作者Sun, R; Xu, T; Zhang, JW; Xue, QJ
刊名Applied surface science
出版日期2006-04-15
卷号252期号:12页码:4236-4243
关键词Amorphous carbon film C+ implantation Single-crystal silicon Friction and wear
ISSN号0169-4332
DOI10.1016/j.apsusc.2005.06.037
通讯作者Xue, qj()
英文摘要Amorphous-carbon (a-c) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and these amorphous carbon films were implanted with 110 kev c+ at fluences of 1 x 10(17) ions/cm(2). the effect of ion mixing on the surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic force microscopy (afm), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope (sem). the changes in chemical composition and structure were investigated by using x-ray photoelectron spectroscopy (xps). the results show that the anti-wear life and adhesion of amorphous carbon films on the si substrates were significantly increased by c ion implantation. the si-c chemical bonding across the interface plays a key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. the friction and wear mechanisms of amorphous carbon film under dry friction condition were also discussed. (c) 2005 elsevier b.v all rights reserved.
WOS关键词ENHANCED ADHESION ; N+ IMPLANTATION ; GLASSY-CARBON ; NI FILMS ; POLYSILICON ; FRICTION ; SURFACES ; SYSTEMS
WOS研究方向Chemistry ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000237835100030
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2379634
专题中国科学院大学
通讯作者Xue, QJ
作者单位1.Chinese Acad Sci, State Key Lab Solid Lubricat, Lanzhou Chem Phys, Lanzhou 730000, Peoples R China
2.Henan Univ, Lab Sepcial Funct Mat, Kaifeng 475001, Peoples R China
3.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Sun, R,Xu, T,Zhang, JW,et al. The study of ion mixed amorphous carbon films on single crystal silicon by c ion implantation[J]. Applied surface science,2006,252(12):4236-4243.
APA Sun, R,Xu, T,Zhang, JW,&Xue, QJ.(2006).The study of ion mixed amorphous carbon films on single crystal silicon by c ion implantation.Applied surface science,252(12),4236-4243.
MLA Sun, R,et al."The study of ion mixed amorphous carbon films on single crystal silicon by c ion implantation".Applied surface science 252.12(2006):4236-4243.

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来源:中国科学院大学

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