Properties of n-type mu c-si : h films by cat-cvd for c-si heterojunction solar cells
文献类型：期刊论文
| 作者 | Zhang, Q; Zhu, M; Liu, F; Liu, J |
| 刊名 | Thin solid films
 |
| 出版日期 | 2006-04-20 |
| 卷号 | 501期号:1-2页码:141-143 |
| 关键词 | Hwcvd N-type mu c-si : h films Heterojunction solar cells |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2005.07.142 |
| 通讯作者 | Zhu, m() |
| 英文摘要 | The electrical and structural properties of n-type mu c-si films prepared by cat-cvd with different doping ratios r = ph3/sih4, deposition pressures p-g, hydrogen dilution ratios s-h, and filament temperatures t-f have been characterized by dark conductivity, raman scattering and photothermal deflection spectroscopy (pds) measurements. the crystalline volume fraction (x-c) of n-type mu c-si:h films is sensitive to t-f rather than s-h and r. the density of states in n-type mu c-si:h films were investigated by pds. the heterojunction solar cells of n-type mu c-si:h on p-type c-si (100) with an undoped a-si:h buffer layer were performed at a deposition rate of 0.35 nm/s. the best j-v parameters of solar cell are j(sc) = 29.5 macm(-2), v-oc = 483 mv, ff = 70%, and q = 10.2%. (c) 2005 published by elsevier b.v. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; MICROCRYSTALLINE SILICON ; EFFICIENCY |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000235979600034 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2379796 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhu, M |
| 作者单位 | Chinese Acad Sci, Dept Phys, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Q,Zhu, M,Liu, F,et al. Properties of n-type mu c-si : h films by cat-cvd for c-si heterojunction solar cells[J]. Thin solid films,2006,501(1-2):141-143. |
| APA | Zhang, Q,Zhu, M,Liu, F,&Liu, J.(2006).Properties of n-type mu c-si : h films by cat-cvd for c-si heterojunction solar cells.Thin solid films,501(1-2),141-143. |
| MLA | Zhang, Q,et al."Properties of n-type mu c-si : h films by cat-cvd for c-si heterojunction solar cells".Thin solid films 501.1-2(2006):141-143. |
入库方式： iSwitch采集
来源：中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。