High-pressure preparation and thermoelectric properties of bi0.85sb0.15
文献类型：期刊论文
| 作者 | Liu, H. J.; Li, L. F.; Shi, Donglu |
| 刊名 | Journal of electronic materials
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 35期号:7页码:L7-l10 |
| 关键词 | Thermoelectric materials Nanotechnology Low temperatures High-pressure synthesis |
| ISSN号 | 0361-5235 |
| 通讯作者 | Liu, h. j.() |
| 英文摘要 | Nanocrystalline bi0.85sb0.15 powders were prepared by a novel mechanical alloying method. the bulk samples were formed by applying a pressure of 6 gpa at different pressing temperatures and times. electrical conductivity, seebeck coefficients, and thermal conductivity were measured in the temperature range 80-300 k. the seebeck coefficient reaches a maximum value of - 173 mu v/k at 150 k. the largest figure of merit, 3.46 x 10(-3) k-1, achieved in this experiment is 50% higher than that of its single-crystal counterpart at 200 k. |
| WOS关键词 | BI-SB ALLOYS ; TRANSPORT-PROPERTIES ; BISMUTH ; TRANSITION ; CRYSTALS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000239159200016 |
| 出版者 | MINERALS METALS MATERIALS SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2379801 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, H. J. |
| 作者单位 | 1.Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China 3.Univ Cincinnati, Dept Chem & Mat Engn, Cincinnati, OH 45221 USA |
| 推荐引用方式 GB/T 7714 | Liu, H. J.,Li, L. F.,Shi, Donglu. High-pressure preparation and thermoelectric properties of bi0.85sb0.15[J]. Journal of electronic materials,2006,35(7):L7-l10. |
| APA | Liu, H. J.,Li, L. F.,&Shi, Donglu.(2006).High-pressure preparation and thermoelectric properties of bi0.85sb0.15.Journal of electronic materials,35(7),L7-l10. |
| MLA | Liu, H. J.,et al."High-pressure preparation and thermoelectric properties of bi0.85sb0.15".Journal of electronic materials 35.7(2006):L7-l10. |
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来源：中国科学院大学
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