Effect of structural transformation on the electrical properties for ge(1)sb(2)te(4) thin film
文献类型：期刊论文
| 作者 | Zhang, Ting; Song, Zhitang; Liu, Bo; Feng, Gaoming; Feng, Songlin; Chen, Bomy |
| 刊名 | Thin solid films
 |
| 出版日期 | 2007-11-01 |
| 卷号 | 516期号:1页码:42-46 |
| 关键词 | Ge(1)sb(2)te(4) Phase change Chalcogenide random access memory Hall effect Data retention |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2007.04.047 |
| 通讯作者 | Zhang, ting(tzhang@mail.sim.ac.cn) |
| 英文摘要 | Dependence of electrical properties of phase change ge(1)sb(2)te(4) thin film on structural transformation was investigated. the electrical resistivity of the film decreases with increasing annealing temperature with a steep drop at similar to 23 0 degrees c (the second crystallization temperature), at which the structure of ge(1)sb(2)te(4) changes from face-centered cubic to trigonal state. the steep drop of resistivity at the second crystallization temperature is mainly due to the increase of hole density within the p-type film, according to hall measurement. the crystallization process has been followed by in situ resistance measurement at various annealing temperatures. transmission electron microscope and atomic force microscope were also employed to study the film. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | PHASE-CHANGE FILM ; MEMORY ; RESISTANCE ; GESBTE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000250638800007 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2380368 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhang, Ting |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA |
| 推荐引用方式 GB/T 7714 | Zhang, Ting,Song, Zhitang,Liu, Bo,et al. Effect of structural transformation on the electrical properties for ge(1)sb(2)te(4) thin film[J]. Thin solid films,2007,516(1):42-46. |
| APA | Zhang, Ting,Song, Zhitang,Liu, Bo,Feng, Gaoming,Feng, Songlin,&Chen, Bomy.(2007).Effect of structural transformation on the electrical properties for ge(1)sb(2)te(4) thin film.Thin solid films,516(1),42-46. |
| MLA | Zhang, Ting,et al."Effect of structural transformation on the electrical properties for ge(1)sb(2)te(4) thin film".Thin solid films 516.1(2007):42-46. |
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来源：中国科学院大学
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