Vold-free low-temperature silicon direct-bonding technique using plasma activation
文献类型：期刊论文
| 作者 | Ma, Xiaobo; Liu, Weili; Song, Zhitang; Li, Wei; Lin, Chenglu |
| 刊名 | Journal of vacuum science & technology b
 |
| 出版日期 | 2007 |
| 卷号 | 25期号:1页码:229-234 |
| ISSN号 | 1071-1023 |
| DOI | 10.1116/1.2406060 |
| 通讯作者 | Liu, weili(rabbitlwl@mail.sim.ac.cn) |
| 英文摘要 | A low-temperature silicon direct-bonding technique has been researched using variant plasma (n-2, o-2, ar, and h/he) pretreatment prior to bonding for surface activation. in plasma bonding, after annealing at 300 degrees c for an hour the authors get a bonding energy of about 2-2.5 j/m(2), which is near the fracture strength of bulk silicon. in si-si wafer bonding, our experiments demonstrate that the origin of voids appearing in low-temperature annealing is related to the plasma variety and activation conditions. the authors believe that the annealing voids and bubbles, which appear and accumulate at the microdefects, are caused by plasma activation. they used an optimized o-2 and h/he plasma-activation process for wafer direct bonding and obtained a high surface energy, void-free hydrophilic si-si wafer bonding. the wafers' root-mean-square surface roughness after plasma activation was measured by an atomic force microscope. the cross-sectional image of the bonding interface was observed by a scanning electron microscope. compared with the standard wet-chemical surface treatment that requires high-temperature annealing (> 1000 degrees c), both the low-temperature and shorter time annealing using plasma pretreatment are suitable for the microelectromechanical systems manufacture process and wafer-scale packaging. (c) 2007 american vacuum society. |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244512400043 |
| 出版者 | A V S AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2380509 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, Weili |
| 作者单位 | 1.Chinese Acad Sci, Nanotechnol Lab, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China 3.Shanghai Simgui Technol Co Ltd, Shanghai 201821, Peoples R China 4.Shanghai Simgui Technol Co Ltd, Shanghai 201821, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Xiaobo,Liu, Weili,Song, Zhitang,et al. Vold-free low-temperature silicon direct-bonding technique using plasma activation[J]. Journal of vacuum science & technology b,2007,25(1):229-234. |
| APA | Ma, Xiaobo,Liu, Weili,Song, Zhitang,Li, Wei,&Lin, Chenglu.(2007).Vold-free low-temperature silicon direct-bonding technique using plasma activation.Journal of vacuum science & technology b,25(1),229-234. |
| MLA | Ma, Xiaobo,et al."Vold-free low-temperature silicon direct-bonding technique using plasma activation".Journal of vacuum science & technology b 25.1(2007):229-234. |
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来源：中国科学院大学
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