The effect of applied negative bias voltage on the structure of ti-doped a-c : h films deposited by fcva
文献类型：期刊论文
| 作者 | Wang, Peng; Wang, Xia; Chen, Youming; Zhang, Guangan; Liu, Weimin; Zhang, Junyan |
| 刊名 | Applied surface science
 |
| 出版日期 | 2007-01-30 |
| 卷号 | 253期号:7页码:3722-3726 |
| 关键词 | Hydrogenated amorphous carbon (a-c : h) films Applied bias voltage Filtered cathodic vacuum arc (fcva) |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2006.08.003 |
| 通讯作者 | Liu, weimin(wmliu@lzb.ac.cn) |
| 英文摘要 | Ti-doped hydrogenated diamond-like carbon (dlc) films were deposited on si(i 0 0) substrates by a filtered cathodic vacuum arc (fcva) method using ar and ch4 as the feedstock. the composition and microstructure of the films were investigated by raman spectroscopy, x-ray photoelectron spectroscopy and ir spectroscopy. the internal stress was determined by the radius of curvature technique. the influence of the bias voltage on the microstructure of the as-deposited films was investigated. it was found that the graphite-like bonds was dominated in the ti-doped 3 dlc film deposited at 0 v bias voltage. when bias voltage was increased to - 150 v, more diamond-like bond were produced and the sp content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. the compressive internal in the ti-doped dlc films also exhibited a maximum value at - 150 v bias voltage. ir results indicated that c-h bonded intensity reduced, and h atoms bonded with c atoms were substituted for the ti atoms as the negative bias voltage increasing. all the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | CATHODIC ARC EVAPORATION ; CARBON-FILMS ; THIN-FILMS ; DIAMOND ; COATINGS ; STRESS ; DESIGN ; SYSTEM ; CVD |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000244381700058 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2381443 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, Weimin |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China 3.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Peng,Wang, Xia,Chen, Youming,et al. The effect of applied negative bias voltage on the structure of ti-doped a-c : h films deposited by fcva[J]. Applied surface science,2007,253(7):3722-3726. |
| APA | Wang, Peng,Wang, Xia,Chen, Youming,Zhang, Guangan,Liu, Weimin,&Zhang, Junyan.(2007).The effect of applied negative bias voltage on the structure of ti-doped a-c : h films deposited by fcva.Applied surface science,253(7),3722-3726. |
| MLA | Wang, Peng,et al."The effect of applied negative bias voltage on the structure of ti-doped a-c : h films deposited by fcva".Applied surface science 253.7(2007):3722-3726. |
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来源：中国科学院大学
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