Effect of resolution enhancement techniques on aberration sensitivities of arf immersion lithography at 45 mn node
文献类型：期刊论文
| 作者 | Li, Yanqiu; Zhang, Fei |
| 刊名 | Japanese journal of applied physics part 1-regular papers brief communications & review papers
 |
| 出版日期 | 2007-05-01 |
| 卷号 | 46期号:5a页码:2936-2940 |
| 关键词 | Immersion lithography Resolution enhanced technology (ret) Polarization Phase shift mask Aberration sensitivity |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.46.2936 |
| 通讯作者 | Li, yanqiu(liyanq@mail.iee.ac.cn) |
| 英文摘要 | The impact of resolution enhancement technologies (ret) on aberration sensitivities are studied in the conditions of different pattern density, numerical aperture (na) and polarized light with arf immersion lithography at 45 nm node. the results show that the aberration sensitivity of all order astigmatism, coma, and spherical aberration is much small when the dense line is printed. the aberration sensitivities are higher when strong alternating phase shift mask (altpsm) and chrome-less (cr-less) psm are employed. the low order aberration sensitivity is much bigger when polarization effect is no longer neglected in hyper na system. ret and aberration should be accounted in conjunction with polarization effect during the design stage since minimization of negative effects is a primary goal. these results reveal that ret, pattern type, size, na and polarized illumination impact the aberration sensitivity significantly in hyper na lithography. tool designer and device maker should pay more attention on this for 45 nm node and below. |
| WOS关键词 | LENS ABERRATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000246781100026 |
| 出版者 | INST PURE APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2382040 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Li, Yanqiu |
| 作者单位 | 1.Beijing Inst Technol, Beijing 100081, Peoples R China 2.Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China 3.Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yanqiu,Zhang, Fei. Effect of resolution enhancement techniques on aberration sensitivities of arf immersion lithography at 45 mn node[J]. Japanese journal of applied physics part 1-regular papers brief communications & review papers,2007,46(5a):2936-2940. |
| APA | Li, Yanqiu,&Zhang, Fei.(2007).Effect of resolution enhancement techniques on aberration sensitivities of arf immersion lithography at 45 mn node.Japanese journal of applied physics part 1-regular papers brief communications & review papers,46(5a),2936-2940. |
| MLA | Li, Yanqiu,et al."Effect of resolution enhancement techniques on aberration sensitivities of arf immersion lithography at 45 mn node".Japanese journal of applied physics part 1-regular papers brief communications & review papers 46.5a(2007):2936-2940. |
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来源：中国科学院大学
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