中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Approximate toffoli gate originated from a single resonant interaction of cavity dissipation and atomic spontaneous emission

文献类型:期刊论文

作者Chen, Chang-Yong1,2
刊名Communications in theoretical physics
出版日期2008-04-15
卷号49期号:4页码:871-876
关键词Toffoli gate Cavity qed Dissipative resonant interaction
ISSN号0253-6102
通讯作者Chen, chang-yong(chenchangyong_64@hotmail.com)
英文摘要We propose a potentially practical scheme to implement an approximate three-qubit toffoli gate by a single resonant interaction in dissipative cavity qed in which the cavity mode decay and atomic spontaneous emission are considered. the scheme does not require two-qubit controlled-not gates but uses a three-qubit phase gate and two hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonant interaction of atoms with the cavity mode. discussions are made for the advantages and the experimental feasibility of our scheme.
WOS关键词QUANTUM LOGIC GATES
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000255100900014
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2386622
专题中国科学院大学
通讯作者Chen, Chang-Yong
作者单位1.Hunan Inst Humanities Sci & Technol, Dept Phys & Informat Engn, Loudi 417000, Peoples R China
2.Chinese Acad Sci, China Grad Sch, Beijing 100049, Peoples R China
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GB/T 7714
Chen, Chang-Yong. Approximate toffoli gate originated from a single resonant interaction of cavity dissipation and atomic spontaneous emission[J]. Communications in theoretical physics,2008,49(4):871-876.
APA Chen, Chang-Yong.(2008).Approximate toffoli gate originated from a single resonant interaction of cavity dissipation and atomic spontaneous emission.Communications in theoretical physics,49(4),871-876.
MLA Chen, Chang-Yong."Approximate toffoli gate originated from a single resonant interaction of cavity dissipation and atomic spontaneous emission".Communications in theoretical physics 49.4(2008):871-876.

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来源:中国科学院大学

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